Binding energy of a hydrogenic donor and of a Wannier exciton in the ‖z‖2/3quantum well

Effects of Dielectric Screening Function and Image Charges on Hydrogenic Donor Binding Energy in a Surface Quantum Well

“…Finite quantum wells of all shapes exhibit this behaviour. [4][5][6] From Figure 1, it is also apparent that the image charges and not the DSF play a vital role in changing the turnover wellwidth. When the effect of image charges is included, the wavefunction spreads out earlier into the barrier and hence the turnover wellwidth increases.…”

“…5 The band gap difference ΔE g between GaAs and Ga 1-x Al x As is related to the Al concentration x by:…”

“…1 Binding energies of a hydrogenic donor in different quantum wells with GaAs/Ga 1-x Al x As have been investigated experimentally and theoretically by many authors. [2][3][4][5][6][7] Several authors have reported the effect of perturbations on hydrogenic donor binding energy in different quantum wells. 8,9 Surface Quantum Well (SQW) composed of vacuum/GaAs/GaAlAs are of considerable interest due to: (1) the presence of localised states even above the single quantum barrier in the GaAlAs layer; 10 and (2) the image charges that arise from the large dielectric mismatch at the single vacuum/GaAs interface.…”

Binding energies of a hydrogenic impurity and of a Wannier exciton in an arbitrary corner structure

“…A variational approach is an effective method for the study of impurity and exciton states in low-dimensional systems. The impurity and exciton binding energies obtained by the variational theory have been successfully compared with a variety of experimental results obtained by many researchers [2,[6][7][8][9][10][11]. Usually, step structures exist at the interfaces of low-dimensional structures [12,13], and this affects their electronic and optical properties considerably.…”