Bifunctional ZnO nanowire/ZnSnO3 heterojunction thin films for photoelectrochemical water splitting and photodetector applications

Impact on the Photocatalytic Dye Degradation of Morphology and Annealing-Induced Defects in Zinc Oxide Nanostructures

“…Pristine, element-doped zinc oxide (ZnO), and the construction of heterojunctions with various semiconductors have made ground in many solar-related applications, such as energy conversion and storage, solar water splitting, solar cells, and photocatalytic water treatment. − Especially, ZnO nanomaterials maintain their popularity due to their high optical absorption, high resistivity against photocorrosion, easy manipulation of morphology, and electrical and catalytic properties. − Nanostructure engineering provides various morphologies with the advantages of a large surface-to-volume ratio and high electron mobility compared to bulk nanoparticles. − Besides, the optical properties of ZnO nanostructures are highly influenced by the size, morphology, synthesis methods/reaction conditions, types of precursors, and utilization of various surfactant materials. − Das et al have reported that the use of trisodium citrate as a surfactant during the hydrothermal synthesis resulted in morphological changes . The presented ZnO morphologies produced in the presence of citrate exhibited novel photoluminescence properties and enhanced photocatalytic efficiency compared to ZnO formed without a surfactant.…”

Solar-assisted all-solid supercapacitors using composite nanostructures of ZnO nanowires with GO and rGO

“…In particular, the use of solar energy as a renewable energy source has become a growing concern to diminish the dependence on fossil fuels. [1][2][3][4][5] Nowadays, several technologies for energy conversion and storage such as photovoltaic (PV) solar cells, 6 photoelectrochemical (PEC) cells, [7][8][9][10] Li-ion batteries, 11 PEC redox-flow batteries, 12 and supercapacitors (SC) 13 have been developed to meet the energy demand. In particular, in the last few years, supercapacitors have attracted significant attention due to their low-cost, safe operation, fast charge-discharge cycles, high power density, and cyclic stability.…”

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…CuI/ZSO-BSO-2 exhibited a photovoltaic enhancement of ∼2.6 × 10 3 folds, with a slight decrease in transparency of ∼5–7%. This indicates that the regulation of carrier behavior by the homologous perovskite BaSnO 3 QD’s transition layer is more important than simple absorption. − The homologous perovskite BaSnO 3 QD at the interface of CuI/ZnSnO 3 act as a ladder to promote the transfer of photo-generated carriers while maintaining decent transparency and increasing carrier injection through their high QY. , Additionally, Cu vacancies induce hole-related carriers, optimizing the intrinsic defects. − The synergistic effects of appropriate Fermi level, high QY of homologous perovskite BaSnO 3 QD, and p-type carrier induced by Cu vacancies enable the achievement of a favorable kinetic equilibrium for high PCE. ,− , Therefore, by modifying with the dual-functional homologous perovskite BaSnO 3 QD, the CuI/BaSnO 3 QD/ZnSnO 3 obtains a decent balance between PCE and transparency. − , Additionally, the excellent physical–chemical stability of inorganic perovskite BaSnO 3 QD and ZnSnO 3 contributes to the overall stability. − ,− …”

“…22,23 However, current ZnSnO 3 -based devices can barely meet the demands of practical applications, necessitating a substantial improvement in photovoltaic conversion. 24,25 Notably, the selection of suitable p-type semiconductors is crucial for transparent photovoltaic devices. 26,27 In addition to the proper bandgap and stability required for the matched potential structure of p−n junctions and carrier transition, appropriate p-type semiconductors are of utmost importance.…”

“…Ma et al used a MoS 2 /ZnSnO 3 nanophotoanode to achieve excellent photoelectric response by reducing carrier recombination . Additionally, the high intrinsic carrier mobility and chemical valence state of ZnSnO 3 contributes to improved PCE and decent inoxidizability for long-term actual applications. , However, current ZnSnO 3 -based devices can barely meet the demands of practical applications, necessitating a substantial improvement in photovoltaic conversion. , …”