“…The advantage of Z-scheme and S-scheme heterostructures over traditional type-II heterostructures is that the photoexcited electrons preserved at higher reduction potentials would take part in water-splitting reactions, which is beneficial for achieving higher photocatalytic reaction efficiency [29][30][31][32]. It is worth mentioning that the migration distance between the electrons and holes can be further shortened in the S-scheme due to band bending caused by the internal electric field of the semiconductors, leading to faster separation of the photo-induced carriers in comparison to the Z-scheme [33]. The first S-scheme heterojunction, 2D/2D WO3/g-C3N4, was published by Yu et al [34], and it has been suggested that the construction of S-scheme heterojunctions relies on the band offset of the two semiconductors.…”