BiFeO3-Thiourea/Carbon heterostructure based self-powered white light photodetector

Kathirvel, A.; Maheswari, A. Uma; Batabyal, Sudip K.; Sivakumar, M.

doi:10.1016/j.matlet.2020.128906

Cited by 24 publications

(6 citation statements)

References 16 publications

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“…The rise time and fall time equations are given as below: of axial Ag/NiO/β-Ga 2 O 3 HS NW PD device are found to be 0.27 s and 0.17 s respectively. The reported device show faster response as compared to some recently reported similar structures [60][61][62]. However, the TF HS device failed to show any significant stable switching (not shown here) which requires more analysis.…”

Section: Bottom Layer Gmentioning

confidence: 46%

A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

Pedapudi¹,

Dhar²

2022

Nanotechnology

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Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition (GLAD) technique. The field emission scanning electron microscope image shows the formation of well aligned and vertical NWs. A typical high resolution transmission electron microscope image confirms the formation of axial HS NWs consisting of β-Ga2O3 NW at the top and NiO NW at the bottom with an overall length ~ 213 nm. A large photo absorption and also photoemission was observed for axial NiO/β-Ga2O3 HS NW as compared to the NiO/β-Ga2O3 HS thin film (TF) sample. Moreover, X-ray photoelectron spectroscopy analysis prove that there are higher oxygen vacancies with no deviation in electronic state after the formation of axial HS NW. Also, a high performance photodetector (PD) with a very low dark current of 6.31 nA and fast photoresponse with rise time and fall time of 0.28 s and 0.17 s respectively at + 4 V was achieved using the axial NiO/β-Ga2O3 HS NWs. The type – II HS p-n junction formation and efficient charge separation at the small wire axis also makes this design to operate in self-powered mode.

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Section: Bottom Layer Gmentioning

confidence: 46%

A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

Pedapudi¹,

Dhar²

2022

Nanotechnology

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“…In semiconductor technology, wide-bandgap semiconductors play a significant role in the development of power electronic devices as well as different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes (LEDs). − The extraordinary characteristics of n-type semiconductors in transparent electronics have sparked significant interest in the growth of transparent p-type semiconductors in both academia and industry. The combination of good transparency and high electrical conductivity is the criterion for a transparent conductor.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered UV Photodetectors Based on Heterojunctions Composed of ZnO Nanorods Coated with Thin Films of ZnS and CuI

Swaminathan

2023

ACS Appl. Nano Mater.

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A simple, inexpensive solution process is used to deposit γ-CuI thin films, and many aspects of the films, such as morphology, crystalline phase, and its optical and electrical properties on annealing are studied. All of the grown films exhibited p-type conductivity and an average transmittance of 70 to 80% in the visible region. The film annealed at 200 °C is observed to be relatively smooth with root-mean-square roughness of 13.25 nm. CuI films annealed at 200 °C displayed a hole mobility of 0.53 cm 2 /Vs and a hole concentration of 8.36 × 10 18 cm −3 . Additionally, the potential of γ-CuI as a p-type material for photodetection is explored by fabricating transparent hybrid ultraviolet (UV) photodetectors based on p-CuI/n-ZnO nanorods and p-CuI/n-ZnS/ZnO nanostructures. The high-resolution transmission electron microscopy (HRTEM) image showed that the ZnO nanorods grew as a single crystal along the [001] direction and smaller CuI attached on their surface. A simple sulfurization procedure has created a poly-nanocrystalline ZnS shell layer over the ZnO nanorods. Crucial photodetector parameters such as responsivity, external quantum efficiency, and detectivity are analyzed with different illumination intensities and incident wavelengths. Under self-powered conditions, upon illumination with 372 nm and intensity of 0.25 mW/cm 2 , the p-CuI/n-ZnO nanorod showed significant responsivity of 25.11 mA/W and detectivity of 4.59 × 10 13 Jones. Insertion of the ZnS layer between the ZnO and CuI has enhanced these parameters to 43.85 mA/W and 3.84 × 10 14 Jones, respectively. This research underlines the potential of p-type CuI as a transparent, high-performance optoelectronic material.

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“…Thus resulting in many free electrons which leads to a large leakage current, The doping of Sm and Nd would restrain the volatilization of Bi, thus decrease the amount of oxygen vacancy and Fe 2+ . This results in a significant decrease of thermally excited carriers caused by oxygen vacancy and Fe 2+ at room temperature, leading to a tiny dark current and large on-off ratio over 10 5 , which far exceeds all BiFeO 3 [8,[35][36][37][38][39][40][41][42] and most ZnO,Graphene,ZnS based photodector [43][44][45] as displayed in table 1.…”

Section: Resultsmentioning

confidence: 99%

Sm, Nd doped BiFeO₃ epitaxial film for photodetector with extremely large on–off current ratio

Zhang,

Jin

et al. 2024

Nanotechnology

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BiFeO3 is one of the star materials in the field of ferroelectric photovoltaic for its relatively narrow bandgap (2.2-2.7eV) and better visible light absorption. However, a high temperature over 600℃ is indispensable in the usual BiFeO3 growth process, leading to impure phase, interdiffusion of components near the interface, oxygen vacancy and ferrous iron ions, which will result in large leakage current and greatly aggravate the ferroelectricity and photoelectric response. Here we prepared Sm, Nd doped epitaxial BiFeO3 film via a rapid microwave assisted hydrothermal process at low temperature. The doped BiFeO3 film exhibits narrow bandgap (1.35eV) and super small dark current, the on-off current ratio reaches over 105. The decrease in band gap and +2/+3 variable element doping are responsible for the excellent photo response. The excellent photo response performances are much better than any previously reported BiFeO3 films, which has great potential for applications in photodetection, ferroelectric photovoltaic and optoelectronic devices.

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BiFeO3-Thiourea/Carbon heterostructure based self-powered white light photodetector

Cited by 24 publications

References 16 publications

A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

Self-Powered UV Photodetectors Based on Heterojunctions Composed of ZnO Nanorods Coated with Thin Films of ZnS and CuI

Sm, Nd doped BiFeO₃ epitaxial film for photodetector with extremely large on–off current ratio

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BiFeO3-Thiourea/Carbon heterostructure based self-powered white light photodetector

Cited by 24 publications

References 16 publications

A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array

A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array

Self-Powered UV Photodetectors Based on Heterojunctions Composed of ZnO Nanorods Coated with Thin Films of ZnS and CuI

Sm, Nd doped BiFeO3 epitaxial film for photodetector with extremely large on–off current ratio

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A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array

Sm, Nd doped BiFeO₃ epitaxial film for photodetector with extremely large on–off current ratio