BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures deposited on spark plasma sintered LaAlO₃ substrates

Combinatorial substrate epitaxy investigation of polytypic growth of AEMnO3 (AE = Ca, Sr)

“…In homopolytypic growth, for example, 3C on 3C or 4H on 4H , the eutaxial arrangement is the unit‐cell over unit‐cell arrangement, which is well known in epitaxial growth of 3C perovskites on single crystals. In prior CSE work, it was shown that 3C BiFeO 3 grew in this fashion on 3C La 0.7 Sr 0.3 MnO 3 ‐buffered 3C LaAlO 3 substrates, as did 3C Sr 2 FeMoO 6 on 3C Sr 2 MgWO 6 . For the metastable 3C SrMnO 3 investigated herein, this was also observed on (100) oriented SrTiO 3 single crystals, similar to earlier reports, and on (100) oriented grains in SrTiO 3 polycrystals.…”

“…In CSE, polished polycrystalline substrates are used, which can be prepared in‐house for a wide range of structural families, and each grain of the substrate can be viewed as a single crystal with a unique orientation. Electron backscatter diffraction (EBSD) is used in CSE as a high‐throughput local structural probe to create phase and orientation maps across large areas of the substrate surface, as well as the deposited film . A single deposition of a film onto a polycrystalline substrate yields thousands of observations from which a broad understanding of phase stability and film‐substrate orientation relationships (ORs) can be developed.…”

Growth of Ca2MnO4 Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

“…In the initial investigations of CSEprepared films, choice of deposition parameters was mainly based on parameters optimized for similar films on single crystals. 41,42,44,45 These results provide a methodology to optimize growth parameters for CSE-prepared films. While we chose to optimize the average IQ as a function of temperature, one could do similar optimizations for any growth parameter, or even for a smaller subset of film orientations.…”

“…If the cluster of points had been located exactly at 45 on . The cause of this "extra" rotation is unclear at this time, and represents an interesting observation made possible by CSE.…”

“…[41][42][43][44][45] We call this approach Combinatorial Substrate Epitaxy (CSE), in which a very large number of crystallographic orientations are present at the surface of the sample, and one can make statistical analyses of the growth modes across epitaxial orientation space. We have previously demonstrated with CSE, using typical growth conditions to obtain epitaxial films on single crystals, that: (1) grain-over-grain epitaxy occurs for most orientations of substrate grains, (2) only a small number of orientation relationships, ORs, exist for simple structures, (3) similar results are obtained for the growth of heterostructured complex oxide films using CSE as are obtained for films grown on single crystals, and (4) metastable and new complex oxides can be stabilized using CSE.…”