BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology

Schwartz, Wilfrid; Yasuda, Hiroshi; Steinmann, Philipp; Boyd, W. W.; Meinel, W.; Hannaman, D.J.; Parsons, S.

doi:10.1109/bipol.2007.4351835

Cited by 12 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, it is specified for a low equivalent noise input voltage of 1.1 nV/ √ Hz at room temperature. Excellent cryogenic performance was expected for it based on the BiCom3HV silicon-germanium (SiGe) heterojunction process [14] used in its fabrication. Individual SiGe transistors have been used in applications requiring temperatures as low as 4 K [15].…”

Section: Operational Amplifiermentioning

confidence: 99%

Design and operation of a cryogenic charge-integrating preamplifier for the MuSun experiment

et al. 2014

View full text Add to dashboard Cite

The central detector in the MuSun experiment is a pad-plane time projection ionization chamber that operates without gas amplification in deuterium at 31 K; it is used to measure the rate of the muon capture process µ − + d → n + n + ν µ . A new charge-sensitive preamplifier, operated at 140 K, has been developed for this detector. It achieved a resolution of 4.5 keV(D 2 ) or 120 e − RMS with zero detector capacitance at 1.1 µs integration time in laboratory tests. In the experimental environment, the electronic resolution is 10 keV(D 2 ) or 250 e − RMS at a 0.5 µs integration time. The excellent energy resolution of this amplifier has enabled discrimination between signals from muon-catalyzed fusion and muon capture on chemical impurities, which will precisely determine systematic corrections due to these processes. It is also expected to improve the muon tracking and determination of the stopping location.

show abstract

Section: Operational Amplifiermentioning

confidence: 99%