BiCMOS OEIC for optical storage systems

Zimmermann, Horst; Kieschnick, K.; Heise, M.; Pless, H.

doi:10.1049/el:19981301

Cited by 19 publications

(7 citation statements)

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“…With an integrated polysilicon resistor of 1 kΩ, rise and fall times of 3.2 nm and 2.8 ns, respectively, were measured for the DPD with λ = 638 nm and U r = 2.5 V [16]. With an integrated 500 Ω resistor, rise and fall times of 1.8 ns and 1.9 ns, respectively, were found [15]. There is no indication of a so-called diffusion tail in the photocurrent (Fig.…”

Section: Double Photodiodementioning

confidence: 99%

Silicon Photo-Receivers

Zimmermann¹

2004

Topics in Applied Physics

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Abstract. The properties of photodiodes being exploitable in standard bipolar, CMOS, and BiCMOS technologies are summarized. In addition examples of advanced photodiodes will be introduced in order to show how the properties of integrated photodiodes can be improved significantly by minor process modifications. Furthermore, examples of optoelectronic integrated circuits (OEICs) for such important applications like optical storage systems and optical fiber receivers are described. New trends for the circuit topology of digital-video-disk (DVD) and digital-video-recording (DVR) read-OEICs are covered. Progress of OEIC receivers for optical data transmission and communication as well as optical interconnects is also summarized.

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Section: Double Photodiodementioning

confidence: 99%

Silicon Photo-Receivers

Zimmermann¹

2004

Topics in Applied Physics

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“…A very effective way to extend the applicability over the entire visible range is to make use of the double diode (DPD) concept proposed in (2). As second diode the BL/ substrate junction vertically underneath the SiGe:C-photodiode can be used.…”

Section: Ecs Transactions 3 (7) 877-891 (2006)mentioning

confidence: 99%

“…There have been so far a lot of attempts of integrating photodetectors into standard CMOS and BiCMOS processes. The kinds of detectors that have been taken into consideration were either quite simple pn-junctions (1), combinations of vertically arranged pn-junctions in form of double photodiodes (DPD) (2), lateral finger structures of metal stripes or heavily doped p/n diffusions (3,4), and PIN-junctions (5,6). Detectors with a built-in amplification for the detection of weak signals like avalanche photodiodes (APDs) (7), bipolar phototransistors (8), and heterojunction bipolar phototransistors (9) have also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Integration of Photonic Detectors in Standard SiGe HBT BiCMOS

Meinhardt

Kraft²,

Zimmermann³

2006

ECS Trans.

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The currently emerging optical data storage technologies of BluRay Disk, respectively High Density Digital Versatile Disk (HDDVD), have opened a new field of activity for photodetectors preferentially integrated in a SiGe heterojunction transistor (HBT) BiCMOS process platform. Besides the advantages this process offers for analog signal processing we show how HBT process modules can be used to integrate fast, high-responsivity photodetectors sensitive to blue, red and near-infrared light of wavelengths 405, 660 and 785nm, respectively. The tradeoffs made for tuning HBT performance are discussed with respect to their impact on photodiode performance. The integration of the photodetector can be carried out with layout changes only not altering any other process step making it therefore an easy-to-do and free-of-extra-cost extension of the HBT BiCMOS base process.

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“…In order to exploit these advantages, the contribution of photogenerated carriers due to slow carrier diffusion has to be minimized. Most , it was found out that the double photodiode (DPD) eliminates the diffusion limitation problem [2]. CD-ROM systems, however, use infrared light (…”

Section: Introductionmentioning

confidence: 99%

Integrated Photodiodes for DVD and CD-ROM Applications

Kieschnick

Zimmermann²,

Seegebrecht³

et al. 2000

30th European Solid-State Device Research Conference

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An n /p-well/p-substrate photodiode (NPD) and an n /n-well/p-substrate photodiode (NND) on standard epitaxial and low doped epitaxial material were implemented in an industrial¡ ¢ ¤ ¦ BiCMOS process. Both devices are fully BiCMOS compatible, so that no process modifications were necessary. A dB bandwidth of more than ¤ ¡ MHz was measured for the NND ( ¤ nm). Due to the modification of the epitaxial material the bandwidth of the NND is enhanced for ¤ ¡ nm, leading to a photodiode which is appropriate simultaneously for advanced CD-ROM and DVD applications.

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BiCMOS OEIC for optical storage systems

Cited by 19 publications

References 1 publication

Silicon Photo-Receivers

Silicon Photo-Receivers

Integration of Photonic Detectors in Standard SiGe HBT BiCMOS

Integrated Photodiodes for DVD and CD-ROM Applications

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