Biaxially aligned buffer layers of cerium oxide, yttria stabilized zirconia, and their bilayers

Abstract

Biaxially aligned cerium oxide (CeO2) and yttria stabilized zirconia (YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrates held at room temperature using ion beam assisted (IBAD) magnetron deposition with the ion beam directed at 55° to the normal of the film plane. In addition, we achieved, room-temperature epitaxial growth of CeO2 by bias sputtering to form biaxially aligned CeO2/YSZ bilayers. The crystalline structure and in-plane orientation of films was investigated by x-ray diffraction techniques. Both the IBAD CeO2 and YSZ films, and the CeO2/YSZ bilayers have a (111) pole in the ion beam direction.

Influence of Surface Pre-Treatment On Electrochemical Properties of CeO2 thin Films Deposited by R.F. Sputtering On AA7075 Aluminum Alloy

“…Thus, we assumed that the deposition rate differences could not affect the texturing of CeO 2 . The results are in agreement with Lee et al, who reported no significant changes in CeO 2 films when oxide targets are used (36), but mismatch with other processing techniques where it has been found a preferential texture in the (200) plane (37)(38)(39). The surface images of CeO 2 films using different experimental conditions without pretreatment were shown in Figure 3 a-d; whereas the effect of chemical pretreatment (NaOH and H 2 SO 4 ) on morphology and growth of CeO 2 thin films using different condition in the chamber are shown in Figure 3 e-h. From these figures, it can be seen that the sputtered CeO 2 displayed small round particles; this growth seems to follow the polish lines giving a uniform, porous and crack-free coating.…”

Transport properties of bi-epitaxialYBa2Cu3O7−δgrain boundary Josephson junctions: Experimental evidence of a subdominant sup

“…The substrates were bombarded with Ar ions at an angle of 55°from the substrate normal during the YSZ deposition to induce epitaxial growth. 21 The ion-beam assisted deposition produced smooth and dense films. 25 The substrates were mounted with the ͑110͒ planes oriented in the ion-beam direction which resulted in an epitaxial YSZ layer with MgO͑110͒ and YSZ͑110͒ planes aligned.…”

“…Our group has been working on YBCO step-edge junctions and YBCO/YSZ superconducting tape in the past decade. 20,21 We started to investigate the fabrication of asymmetric 45°͓001͔ tilted grain boundary junctions by combining our techniques on making high-quality step edges and depositing high-quality YSZ to produce a bi-epitaxial junction. In this paper, we present fabrication techniques and measurements of 45°grain boundary junctions on MgO substrates using different thicknesses of YSZ as the seed layer.…”

High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering

“…IBAD has been used to produce biaxial textured thin films of Nb, 4 TiN, 5 MgO, 6 CeO 2 , 7 TiO 2 , 8 ZrN, 9 and yttria-stabilized zirconia ͑YSZ͒. While out-of-plane texture often occurs in thin films, 1 special measures such as off-axis ion beam assisted deposition ͑IBAD͒ 2 or an obliquely oriented sputter source 3 are needed to produce inplane texture.…”