2016
DOI: 10.1063/1.4942215
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Bias voltage dependence of two-step photocurrent in GaAs/AlGaAs quantum well solar cells

Abstract: We investigated photoresponses of AlGaAs solar cells in which coupled GaAs quantum wells were embedded in the i-region of p-i-n diodes; we studied how the bias voltage Vb affects the normal photocurrent I generated by the visible light and a “two-step” photocurrent ΔI generated by the absorption of visible and infrared photons. We found that as Vb exceeds −0.2 V, ΔI rises and peaks at 0.6 V, while the normal photocurrent I falls to about half of its saturated level. These findings are discussed in terms of a r… Show more

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Cited by 3 publications
(6 citation statements)
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“…In details, the resulting intermediate band solar cell under analysis, was based on a layered structure within material and parameters found in the literature [4]. The 1 µm wider intrinsic layer and the doped contacts has been chosen to be Ga x Al 1−x As, with x = 0.3.…”
Section: A Structurementioning
confidence: 99%
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“…In details, the resulting intermediate band solar cell under analysis, was based on a layered structure within material and parameters found in the literature [4]. The 1 µm wider intrinsic layer and the doped contacts has been chosen to be Ga x Al 1−x As, with x = 0.3.…”
Section: A Structurementioning
confidence: 99%
“…The photo-generation process is, mainly, a result of two interband transitions, one at the bulk region and other at the quantum wells region. However, in the latter one, to extract carriers from the confined subbands a second transition needs to take place [3,4]. Both the tunneling and the intersubband transition to continuum states, extended throughout the contacts region, can be used as such a secondary process [5,6].…”
Section: Transition Ratesmentioning
confidence: 99%
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