2003
DOI: 10.1103/physrevb.68.174430
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Bias voltage dependence of the magnetoresistance in ballistic vacuum tunneling: Theory and application to planarCo(0001)junctions

Abstract: Motivated by first-principles results for jellium and by surface-barrier shapes that are typically used in electron spectroscopies, the bias voltage in ballistic vacuum tunneling is treated in a heuristic manner. The presented approach leads in particular to a parameterization of the tunnel-barrier shape, while retaining a first-principles description of the electrodes. The proposed tunnel barriers are applied to Co(0001) planar tunnel junctions. Besides discussing main aspects of the present scheme, we focus … Show more

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Cited by 7 publications
(1 citation statement)
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“…screened KKR or layer KKR) [4][5][6]. These methods were successfully applied to a variety of problems (without any claim of completeness we refer to references [7][8][9][10][11][12][13][14]).…”
Section: Introductionmentioning
confidence: 99%
“…screened KKR or layer KKR) [4][5][6]. These methods were successfully applied to a variety of problems (without any claim of completeness we refer to references [7][8][9][10][11][12][13][14]).…”
Section: Introductionmentioning
confidence: 99%