Bias-tuned dielectric properties and Non-Debye relaxation in vanadium doped BaSnO₃ nanocubes

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…16,[28][29][30]38 The introduction of BaSnO 3 QD slightly reduces transparency but helps in achieving a balance between solar efficiency, carrier injection, and potential transitions. 50,51 Notably, the slight decrease in transparency resulted in a photovoltaic enhancement of 10 3 magnitudes, indicating that the regulation of carrier behavior in perovskite BaSnO 3 QD plays a crucial role in improving performance beyond simple absorption enhancement.…”

“…Additionally, carrier recombination is efficiently inhibited by the modification of BaSnO 3 QD, as supported by the remarkable decrease in PL (photoluminescence) (Figure S4b). [48][49][50]62 Consequently, carrier lifetime was significantly prolonged, as evidenced by the decreased extremum in Bode plots…”

“…The obtained perovskite ZnSnO 3 film exhibited only a weak peak at 26.48° corresponding to the (012) plane (Figure ) (PDF#00-028-1486). , Interestingly, this peak was observed in all formed p–n junctions, indicating the good stability of the perovskite ZnSnO 3 film during continuous sputtering and iodization. Owing to the smaller thickness and grain size of the perovskite ZnSnO 3 film, the diffraction peaks of ZnSnO 3 were lower in intensity than CuI, which was further characterized using high-resolution transmission electron microscopy (TEM). , The CuI/ZnSnO 3 p–n junction exhibited a series of peaks at 25.23, 29.19, 42.02, 49.66, 61.05, 67.24, and 76.88° corresponding to the (111), (200), (220), (311), (400), (331), and (422) planes of CuI (PDF#04-007-2948). − While the single-perovskite BaSnO 3 QDs displayed peaks at 31.03, 44.34, 54.97, 64.33, and 72.83°, corresponding to the (110), (200), (211), (220), and (221) planes (PDF#97-067-0659), − these peaks were hardly observed in the CuI/ZnSnO 3 p–n junctions owing to their low concentration. Notably, the absence of other peaks indicates the complete decomposition of the polymer precursor and the thorough removal of iodine powder.…”

“…Xu et al used Sr-doped CsPbI 3 QD to optimize the efficiency of inorganic perovskite solar cells by reducing interface recombination, enhancing cavitation extraction, and improving carrier lifetime . In the case of homologous BaSnO 3 QD, , which possess high QY, high carrier mobility, and an appropriate potential structure, their similar perovskite crystal structure to ZnSnO 3 provides a more relaxed potential transitions and high-quality interface lattice matching, thereby improving carrier efficiency. − For example, Sun et al used BaSnO 3 nanoparticles as an electronic transport layer to reduce leakage current, enhance interface extraction, and decrease charge transfer resistance in perovskite solar cells . Additionally, the small size of perovskite QD optimizes interface contact and further improves the formed p–n junction. , …”

Dielectric and piezoelectric augmentation in self-poled magnetic Fe3O4/poly(vinylidene fluoride) composite nanogenerators

“…To distinguish the resistance correlations between the dopant electret and the thermoplastic polymersystem and for developing a finer insight of the resistance-reactance correspondence, Cole-Cole plots are drawn, see figure 6. For fitting the experimental data, an equivalent circuit model is proposed including a couple of resistors (R) and constant phase-elements (Q), connected as-shown in figure 6(a) [55]. Fe 3 O 4 has a much lower resistance compared to the highly non-reactive insulator PVDF.…”