Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

Abstract

In this paper, a high-k metal-oxide film (ZrO 2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with high-k ZrO 2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO 2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO 2 dielectric exhibit a saturation mobility up to 12.7 cm 2 V −1 s −1 , and an on/off ratio as high as 7.6 × 10 5. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.

Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga

“…The AFM images in Figure 3 show that the root mean square of the insulator layer measured 1.0147 nm. The smooth surface positively influenced the electrical properties and stability; such a condition could avoid electron trapping at the insulator-channel interface [ 21 ]. Meanwhile, we performed AFM measurements for samples A, B, and C, shown in Figure 4 .…”

Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

“…Based on the measured density, the relative porosity volume ( R ) of ZrO 2 film was calculated by the following formula. 16 ρ 1 and ρ represent the theoretical density of bulk ZrO 2 materials (5.68 g cm −3 ) and the film density measured by XRR, respectively. ρ h is the hole density (air), and in this case it is approximately zero.…”

Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

“…The aluminum-hafnium-magnesium-yttrium-oxide (AHMYO) group component with the best optical properties has an average transmittance of 95%. Compared with the oxide films prepared by the solution method, the multiple oxide films in this experiment have made some breakthroughs in leakage current and capacitance density [ 15 , 32 ]. Above all, the films in this experiment have great application prospects for making transparent new electronic devices with good transmittance, low leakage current, and high capacitance density.…”