Bias-Field-Free Microwave Operation in NiFe/FeMn Exchange Biased Bilayers by Varying FeMn Thickness

Panigrahi, Brahmaranjan; Raja, M. Manivel; Murapaka, Chandrasekhar; Haldar, Arabinda

doi:10.1007/s10948-023-06545-0

Cited by 5 publications

(3 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, we would like to mention that the shift we have observed in these stacks can be attributed to the collective impact of the Ta/NiFe seed layer and the oblique deposition process used in the deposition to facilitate the growth of the γ-fcc FeMn phase at the room temperature. We have already reported a similar shift in the NiFe/FeMn bilayers in our earlier work [23,24]. Further, a two-step reversal M-H loop was observed for higher FeMn thickness i.e.…”

Section: Methodssupporting

confidence: 79%

“…Special interest has been devoted to NiFe/FeMn bilayers and NiFe/FeMn/NiFe trilayer system for their compatibility of the read operation with the state-of-the-art electronic platform [18][19][20][21][22]. In our earlier studies, we demonstrated the zero-field resonance mode in NiFe/FeMn bilayers and explored the importance of a biasfield-free system for microwave devices [23,24]. Similarly, NiFe/FeMn/NiFe tri-layer system showed two distinct resonance peaks in in-plane and out-of-plane ferromagnetic resonance (FMR) spectra which were attributed to the two NiFe layers, respectively [25].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Panigrahi,

Raja,

Murapaka

et al. 2024

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Microwave devices with more than one operating frequency and their ease of tunability are of great importance for high-frequency information processing. Magnetic thin films offer an unparalleled advantage of engineering different microwave bands that can be precisely tailored and reconfigured externally. Here, novel trilayer structures consisting of NiFe/FeMn/NiFe with varying anti-ferromagnetic FeMn layer thickness have been investigated by exploring their ferromagnetic resonance (FMR) properties and inverse spin Hall effect (ISHE) responses. Two-step magnetic hysteresis loops are observed for higher FeMn thickness (t ≥ 12 nm), where the bottom NiFe layer shows a comparatively more significant shift due to the presence of strong interfacial exchange coupling. FMR study reveales two resonant modes associated with the two ferromagnetic layers, which are distinguishable for higher thicknesses of FeMn or at high excitation frequencies. The choice of FeMn thickness determines the operating frequencies, which can be finely tailored by optimizing the FeMn thickness. Gilbert damping parameter is found to be in the range of 0.009 - 0.012 where the presence of exchange bias adds to the the scattering mechanisms. Prominent ISHE responses are obtained from the bottom NiFe layer as compared to the top NiFe layer. Variation of FeMn thickness also shows a strong influence on the spin pumping (Vsp), and perpendicular anisotropic magnetoresistance (VAMR⊥) components. The results are correlated with the efficiency of spin flow and spin-to-charge conversion of the FeMn layer. Our systems can be used as an emerging alternative for microwave detectors and microwave energy harvesters.

show abstract

Section: Methodssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Panigrahi,

Raja,

Murapaka

et al. 2024

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is very critical to manipulate the formation of planar defects APBs in a controllable and reliable manner for the novel device applications [22][23][24]. Previous studies on the exchange bias effect have mostly focused on alloy and perovskite heterojunctions [25][26][27][28][29]. However, the microstructural properties related to exchange bias effect in bilayer spinel oxide heterojunctions has been rarely reported.…”

Section: Introductionmentioning

confidence: 99%

Atomic-Scale Structural Properties in NiCo2O4/CuFe2O4 Bilayer Heterostructures on (001)-MgAl2O4 Substrate Regulated by Film Thickness

Liu,

Zhang,

et al. 2024

Preprint

View full text Add to dashboard Cite

Changing the film thickness to manipulate the microstructural properties has been considered as a potential method in practical application. Here, we report that atomic-scale structural properties regulated by film thickness in NiCO2O4(NCO)/CuFe2O4(CFO) bilayer heterostructure prepared on (001)-MgAl2O4 (MAO) substrate by means of aberration-corrected scanning transmission electron microscopy (STEM). The misfit dislocations at NCO/CFO interface and antiphase boundaries (APBs) bound to dislocations within the films both are found in NCO (40 nm)/CFO (40 nm)/MAO heterostructure to contribute to relaxation of mismatch lattice strain. In addition, the non-overlapping a/4[101]-APB is found and the structural transformation of this kind of APB is resolved at atomic scale. In contrast, only the interfacial dislocations form at interface without the formation of APBs within the films in NCO (10 nm)/CFO (40 nm)/MAO heterostructure. Our results provide evidence that formation of microstructural defects can be regulated by changing film thickness to tune magnetic properties of epitaxial bilayer spinel oxide films.

show abstract

Spin-to-charge conversion via dual-mode ferromagnetic resonance in Ta/NiFe/FeMn/CoFeB multilayer

Panigrahi,

Manivel Raja,

Murapaka

et al. 2024

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

Bias-Field-Free Microwave Operation in NiFe/FeMn Exchange Biased Bilayers by Varying FeMn Thickness

Cited by 5 publications

References 59 publications

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Atomic-Scale Structural Properties in NiCo<sub>2</sub>O<sub>4</sub>/CuFe<sub>2</sub>O<sub>4</sub> Bilayer Heterostructures on (001)-MgAl<sub>2</sub>O<sub>4</sub> Substrate Regulated by Film Thickness

Spin-to-charge conversion via dual-mode ferromagnetic resonance in Ta/NiFe/FeMn/CoFeB multilayer

Contact Info

Product

Resources

About