Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Wu, Yifeng; Keller, S.; Kozodoy, P.; Keller, B.P.; Parikh, P.; Kapolnek, D.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1109/55.585362

Cited by 201 publications

(94 citation statements)

References 8 publications

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“…HEMTs based on Al x Ga 1−x N/GaN heterostructures are the most interesting candidate since their description in 1993 [1] and demonstration of high-power operability [2]. Due to their large bandgap energy, large electron drift velocities, high conduction band discontinuity and high thermal stability, Al x Ga 1−x N/GaN heterostructures can operate at high power and high temperature conditions with a 2DEG density and high mobility values as compared even with GaAs-based devices [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Li̇şesi̇vdi̇n¹,

Acar²,

Kasap³

et al. 2007

Semicond. Sci. Technol.

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Hall effect measurements on undoped Al 0.25 Ga 0.75 N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al 0.25 Ga 0.75 N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al 0.25 Ga 0.75 N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.

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Section: Introductionmentioning

confidence: 99%

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Li̇şesi̇vdi̇n¹,

Acar²,

Kasap³

et al. 2007

Semicond. Sci. Technol.

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“…Recently, many nitride devices are demonstrated and show the good device performance. The nitride films for these devices are almost grown by metalorganic chemical vapor deposition (MOCVD), ammonia (NH 3 ) gas-source molecular beam epitaxy (GSMBE) and radio-frequency nitrogen (N 2 ) plasma-assisted MBE (rf-MBE) on sapphire or SiC substrates [1][2][3].…”

mentioning

confidence: 99%

Surface morphology of GaN layer grown by plasma‐assisted molecular beam epitaxy on MOCVD‐grown GaN template

Ide¹,

Shimizu²,

Kuo³

et al. 2003

phys. stat. sol. (c)

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We performed the epitaxial growth of the GaN layer on MOCVD-grown GaN templates by plasmaassisted MBE (rf-MBE). We investigated the surface morphology and the growth-mode mechanism, varying the growth condition such as the growth rate and the growth temperature. By reducing the growth rate from 0.5 µm/h to 0.2 µm/h, smooth and flat surface was achieved. The rms surface roughness of 0.2-µm/h-GaN films was smaller than that of MOCVD templates. The cause of smooth surface morphology was the restriction of the spiral growth. Moreover, by changing Ga-flux at 0.2-µm/h growth condition, we found that it was important for smooth surface morphology to grow in stoichiometric condition as well as low growth rate. Especially, rf-MBE has the following advantages: (i) heterojunction interface is sharp, (ii) film thickness can be controlled uniformly, (iii) growth temperature is low. Owing to these specific features, rf-MBE is suitable for the growth of heterostructure films. Since almost nitride devices such as laser diodes (LDs) and high electron mobility transistors (HEMTs) utilize heterostructure films, the advantage of the heteroepitaxial growth in rf-MBE is important to fabricate the nitride wafer for the device application. Moreover, rf-MBE is not needed toxic gases such as NH 3 . The growth without toxic gases leads to the preferred features such as low chamber damage, low background carrier density and low impurity incorporations such as hydrogen and carbons in comparison with MOCVD and GSMBE.However, the quality of the rf-MBE-grown nitride films on sapphire was poor in electrical properties especially. In the case of rf-MBE-grown films, GaN layers grown on sapphire substrates have two kinds of the lattice polarities, which are (0001) Ga-polarity and (000-1) N-polarity. Therefore, the main reason of the poor film-quality is that (0001) Ga-polarity GaN grains and (000-1) N-polarity ones coexist [4].In previous study, we achieved the high-quality rf-MBE-grown GaN films with Ga-polarity by using In exposure and AlN buffer layer [5,6]. Using these Ga-polarity films, AlGaN/GaN HEMTs were fabri-

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“…AlGaN/GaN heterostructures with high sheet carrier concentrations of about 10 13 cm -2 have been a subject of intense recent investigation and, have emerged as attractive candidates for high electron mobility transistors (HEMTs) operating at high voltage and high-power at microwave frequencies [7,14,[16][17][18][19]. Although the maximum electron drift mobility of two-dimensional electron gases with sheet carrier concentrations of about 5x10 12 cm -2 in GaN is predicted and measured to about 2000 [61] and 18000 cm 2 /Vs [64] at 300 and 77 K, respectively, which is much less than that of GaAs [65], GaN has a larger peak electron velocity, larger saturation velocity, higher breakdown voltage and thermal stability, making this material very suitable for use as channel-material in microwave power devices [66].…”

Section: Algan/gan Heterostructure Electronicsmentioning

confidence: 99%

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Ambacher

Eickhoff

Link

et al. 2003

phys. stat. sol. (c)

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Electronic transport in semiconductors that possess high internal spontaneous and piezoelectric polarization opens up a new field of pyroelectronics and pyrosensors. The pyroelectric character of group-III-nitrides with wurtzite crystal structure yields a novel degree of freedom in designing and tailoring devices for modern micro- and nanoelectronic applications. Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of ions, gases and polar liquids. We present a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases which are formed at the AlGaN/GaN interface due to the difference in the total polarization of two adjacent III-nitride layers. We demonstrate that the two-dimensional electron gases (2DEGs) achieved without modulation doping are very suitable as channel of high electron mobility transistors optimally suited for high power and high frequency applications (PART A) as well as for various kinds of sensors which can be operated in harsh environments (PART B)

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Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Cited by 201 publications

References 8 publications

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Surface morphology of GaN layer grown by plasma‐assisted molecular beam epitaxy on MOCVD‐grown GaN template

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

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Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Cited by 201 publications

References 8 publications

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

Surface morphology of GaN layer grown by plasma‐assisted molecular beam epitaxy on MOCVD‐grown GaN template

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

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Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures