Abstract:This paper reports on the radiation response of 90 nm CMOS transistors to a high fluence (3x1012 p/cm2) of -60 MeV protons. A pronounced dependence on the gate bias VGS during the exposure has been noted for the n-channel devices: while no degradation of the input and output characteristics is found for VGS=O V and a modest degradation for floating gate conditions, a catastrophic failure can be observed when a positive gate bias of 1.2 V is applied. This behaviour is found for devices with a physical gate oxid… Show more
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