Bias-controlled ultrafast demagnetization in magnetic tunnel junctions

Savoini, Matteo; Piovera, C.; Rinaldi, Christian; Albisetti, Edoardo; Petti, Daniela; Khorsand, A.R.; Duó, Lamberto; Dallera, C.; Cantoni, Matteo; Bertacco, Riccardo; Finazzi, Marco; Carpene, E.; Kimel, A.V.; Kirilyuk, Andrei; Rasing, T.H.M.

doi:10.1103/physrevb.89.140402

Cited by 13 publications

(7 citation statements)

References 35 publications

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“…[He et al ., 2013] observed that spin tunneling through MgO spacers influenced ultrafast demagnetization of adjacent CoFeB layers. Control of femtosecond demagnetization in a CoFeB-based magnetic tunnel junction was demonstrated by tuning the voltage applied to the junction [Savoini et al ., 2014a]. …”

Section: Interfacial Effects In Ultrafast Magnetization Dynamicsmentioning

confidence: 99%

Interface-induced phenomena in magnetism

et al. 2017

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This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

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Section: Interfacial Effects In Ultrafast Magnetization Dynamicsmentioning

confidence: 99%

Interface-induced phenomena in magnetism

et al. 2017

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“…This allows a selection of states available in tunneling. Under different bias-voltages, the spin-dynamics have been studied using ultrafast lasers in search of a modification of the ultrafast demagnetization 55 . Spin-transfer torque driven by extreme temperature gradients seem feasible 56 , 57 as indicated by research published so far 58 , 59 .…”

Section: A Thz Spintronicsmentioning

confidence: 99%

“…Under different bias-voltages, the spin-dynamics have been studied using ultrafast lasers in search of a modification of the ultrafast demagnetization. 55 Spin-transfer torque driven by extreme temperature gradients seems feasible, 56,57 as indicated by researches published so far. 58,59 New concepts in spintronic devices focus on a more compact version of the magnetic device structures.…”

Section: Novel Applications In the Thz Range A Thz Spintronicsmentioning

confidence: 99%

Perspective: Ultrafast magnetism and THz spintronics

Walowski

Münzenberg

2016

Journal of Applied Physics

325

205

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This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now. Published by AIP Publishing. [http://dx

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“…[10][11][12][13][14][15] Therefore, the method allows for the evaluation of broadband FMR in micron-sized junctions without the need for thick insulating layers or MTJ structures. Several groups have studied the AO-TRMOKE in MTJs in terms of spin transport and dynamics, 16,17) whereas AO-TRMOKE for the precessional dynamics of magnetization in a junction under applied voltage has never been reported. In this study, AO-TRMOKE in CoFeB films was studied within a micron-sized tunnel junction under an applied voltage via a MgO barrier, and voltage tuning of the FMR frequency and the relaxation time were observed.…”

mentioning

confidence: 99%

All-optical detection of magnetization precession in tunnel junctions under applied voltage

Sasaki

Suzuki

Sugihara

et al. 2017

Appl. Phys. Express

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An all-optical time-resolved magneto-optical Kerr effect measurement of a micron-sized tunnel junction with a CoFeB electrode was performed. The femtosecond (fs) laser-induced magnetization precession was clearly observed at various magnetic field angles. The frequency f and relaxation time τ of the magnetization precession varied with the voltage applied via a MgO barrier. The precession dynamics were in accordance with Kittel’s ferromagnetic resonance mode, and the voltage-induced changes in f and τ were well explained by the voltage-induced change in the perpendicular magnetic anisotropy of −36 fJ/Vm.

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Bias-controlled ultrafast demagnetization in magnetic tunnel junctions

Cited by 13 publications

References 35 publications

Interface-induced phenomena in magnetism

Interface-induced phenomena in magnetism

Perspective: Ultrafast magnetism and THz spintronics

All-optical detection of magnetization precession in tunnel junctions under applied voltage

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