Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

Dalapati, Pradip; Yamamoto, Kosuke; Kubo, Toshiharu; Egawa, Takashi; Miyoshi, Makoto

doi:10.1016/j.ijleo.2021.167691

Cited by 15 publications

(4 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In recent years, there has been significant progress in the development of GaN-based materials and their UV photodetectors. Among these advancements, PIN-type structures have gained preference due to their ability to effectively enhance device responsivity and quantum efficiency, as well as their capability to operate in photovoltaic mode [6] [7]. The optimal choice for a high-resistance GaN substrate is intrinsic GaN due to its inherent properties.…”

Section: Introductionmentioning

confidence: 99%

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Xu,

Liu,

et al. 2024

International Academic Conference on Optics and Photonics (IACOP 2023)

View full text Add to dashboard Cite

In this paper, we present the design and simulation of a GaN-based back-illuminated ultraviolet (UV) photodetector with an absorption layer compensation doping. In the conventional UV detector, the absorption layer typically exhibits a high background doping concentration (ranging from 1.0×10 15 to 1.0×10 17 cm -3 ), which unintentionally introduces carriers that impact the electric field distribution within the absorption layer. Consequently, the electric field near the N electrode is diminished. In the back-illumination operating mode, a substantial amount of the incident light is absorbed by the absorption layer positioned near the N electrode. This is primarily attributed to the high absorption coefficient of the AlGaN material. Consequently, the lower electric field in this region hinders the prompt conversion of the photogenerated carriers into signals. This design improves the performance of the UV photodetector by simulating the implementation of compensatory doping in the absorber layer. This helps to reduce the impact of background doping concentration. After optimization, at the peak detection wavelength of 360 nm, the compensated doped PD exhibited an unbiased peak responsivity of 0.15 A/W, as determined by spectral response simulation work.

show abstract

Section: Introductionmentioning

confidence: 99%

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Xu,

Liu,

et al. 2024

International Academic Conference on Optics and Photonics (IACOP 2023)

View full text Add to dashboard Cite

show abstract

“…In order to discard the external power supply of traditional UV PDs and reduce the weight of the device, self-powered UV PDs with energy-savings have become a hotbed of current research. Researchers have developed detectors with a p–n/p–i–n junction, , a metal–semiconductor–metal (MSM), , a Schottky diode, , and a PEC cell type, − in order to realize the self-driving characteristic. Unlike Schottky and heterojunction detectors, which require complex fabrication processes and high costs, PEC-type detectors have the advantage of being easy to manufacture and inexpensive.…”

Section: Introductionmentioning

confidence: 99%

Ordered GaN Nanorod Arrays for Self-Powered Photoelectrochemical Ultraviolet Photodetectors

Chen

Zhang

Shao

et al. 2022

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Self-powered ultraviolet (UV) photodetectors have great application prospects in the fields of UV astronomy, environmental monitoring, and space communication. In particular, the emerging photoelectrochemical photodetectors (PEC PDs) without external bias, high sensitivity, and environmental sensitivity have attracted extensive attention. Herein, self-powered PEC PDs were designed and constructed by using highly ordered GaN nanorod arrays (NRAs) as photoelectrodes. Without external bias, PEC PDs with NRA structures exhibit a high peak responsivity of 6.04 mA/W and a detectivity of 5.14 × 1010 Jones, which are 12 and 5.1 times higher, respectively, than those of the planar device. The large solid–liquid interface of the nanorod structure will lead to an improved built-in electrical field to promote carrier collection and rapid directional transmission, which can enhance the generation and separation of photogenerated carriers. Moreover, an optimized nanoarray will increase the UV detection effect significantly, which provides instruction for the design and fabrication of high-performance self-powered PEC PDs in the future.

show abstract

“…For example, using crystalline MAPbCl 3 as an application, UV photodetectors show several orders of magnitude improvement . Gallium nitride (GaN), as a representative of the third-generation semiconductor, is the preferred candidate material for UV–vis optoelectronic devices because of its wide band gap (3.4 eV), high saturation rate, electron mobility, and thermochemical stability. − In addition, perovskite devices composed of nanoporous (NP) GaN as a substrate in conjunction with an upper perovskite layer have many desired properties including, for example, increasing the stability of the perovskite layer in ambient conditions, increasing the device’s light capture of the device, and improving the device’s sensing performance and sensitivity of the device . Lim et al .…”

Section: Introductionmentioning

confidence: 99%

Effect of Structural Morphology and Material Factors on Radiative Properties of Hybrid Perovskite/Nanoporous GaN Hierarchical Composite Structure

Cheng

Zhao

et al. 2022

ACS Appl. Opt. Mater.

View full text Add to dashboard Cite

The encapsulation of hybrid perovskite in nanoporous GaN is a promising strategy to reduce perovskite degradation and improve photoelectric performance. Exploitation of the intrinsic light-matter interaction in such a composite structure greatly benefits improving device optimization. Herein, we report the perovskite synthesis, structural design, and radiative properties of perovskite/nanoporous GaN hierarchical composites using spectroscopic ellipsometry (SE) experiments as well as electromagnetic simulations. Firstprinciples calculations reveal the relationship between electronic interband transitions and the dielectric function of perovskite measured by SE. We use the finite-difference time-domain (FDTD) and finite-element method (FEM) simulations to analyze the spectral radiation properties for the hierarchical composite structure in terms of both morphology dependence and material factors. The optical absorption peaks in the near-infrared−visible region are collectively determined by the nanopore size, layer thickness, and incident angle of light. Also, the optical absorption distribution patterns are related to variables of the halogen, metal elements, and temperature. This work is integrated with the development of perovskite-based applications for solar functional batteries, light-emitting diodes (LED), and optoelectronic detectors.

show abstract

Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

Cited by 15 publications

References 35 publications

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Ordered GaN Nanorod Arrays for Self-Powered Photoelectrochemical Ultraviolet Photodetectors

Effect of Structural Morphology and Material Factors on Radiative Properties of Hybrid Perovskite/Nanoporous GaN Hierarchical Composite Structure

Contact Info

Product

Resources

About