Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

Seo, Bo-Hyun; Shaislamov, Ulugbek; Kim, S.-W.; Kim, H.-K.; Yang, Bee Lyong; Hong, Suk Ki

doi:10.1016/j.physe.2006.09.003

Cited by 17 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has also been proposed that FeFET operation based on polarization rotation rather than inversion can lead to significantly lower operation voltage and faster speed [276]. In addition, with the development of the materials' fabrication technologies, the non-planar ferroelectric nanostructures such as ferroelectric nanowires [277][278][279][280], nanotubes [281][282][283], and nano-particles [281] have been successfully demonstrated, which can possibly lead to 3D FeFET device architecture. The third direction involves incorporating the nanoscale domain patterning via scanning probe approach to achieve local property control and tailored functionalities.…”

Section: Conclusion and Future Perspectivesmentioning

confidence: 99%

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Hong

2016

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

show abstract

Section: Conclusion and Future Perspectivesmentioning

confidence: 99%

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Hong

2016

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…The advantages of the nonvolatility and NDRO process make FeFET ideal for memory applications. With the development of material fabrication technologies, the non-planar ferroelectric nanostructures such as FE NWs [105-107], nanotube [108-110], and NPs [108] have been prepared successfully. Although the capacity of the first FeRAM had only a 256-bit density [111], with the incorporation of the modern semiconductor technology, ferroelectric nanostructures with much higher integration density have been integrated in a large scale [112,113].…”

Section: Discussionmentioning

confidence: 99%

Ferroelectric memory based on nanostructures

Liu

Chen

et al. 2012

Nanoscale Res Lett

View full text Add to dashboard Cite

In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs.

show abstract

“…An MFM (metal-ferroelectric-metal) structure with PVDF has shown P r = 11.9 μC cm −2 and a coercive voltage of 2.0 V [54]. The use of nanostructured materials in FeRAM fabrication has not received much attention although nanowires and nanotubes of FE materials have been prepared and studied [55][56][57][58]. PZT has been grown in the form of nanowires using the sol-gel method [55] and solvothermal technique [56].…”

Section: Ferroelectric Random Access Memory (Feram)mentioning

confidence: 99%

Nanoscale memory devices

Chung¹,

Deen²,

Lee³

et al. 2010

Nanotechnology

108

View full text Add to dashboard Cite

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO(2).

show abstract

Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

Cited by 17 publications

References 11 publications

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Ferroelectric memory based on nanostructures

Nanoscale memory devices

Contact Info

Product

Resources

About