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2018
DOI: 10.1111/ijag.12976
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Bi2O3–TiO2–Nd2O3 lead‐free material for microwave device applications

Abstract: Lead-free Bi 2 O 3 -TiO 2 -Nd 2 O 3 system and its potential application for microwave devices applications were studied. The samples were synthesized using the melt quenching method. According to the X-Ray Diffraction analysis, the samples are polycrystalline with three different crystal phases. Measurements of the dielectric complex permittivity function were made at 2.7 GHz, using a resonant cavity and the small perturbation theory. The values of the dielectric permittivity of the prepared materials were co… Show more

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Cited by 6 publications
(3 citation statements)
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“…Polyphase samples were synthesized in the system Bi 2 O 3 -TiO 2 -Nd 2 O 3 using the method of melt quenching, and developed a methodology for the control of the constituent material Auriuvilius and pyrochlore crystalline phases. The method is used to control the high-frequency dielectric characteristics [40]. Additionally, the glasscrystal materials for sensors in the system SiO 2 -Bi 2 O 3 -TiO 2 have been synthesized by a method of melt quenching and controlled crystallization of the glass and subsequent synthesis of thin layers by ink-screen-printing technique [41].…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Polyphase samples were synthesized in the system Bi 2 O 3 -TiO 2 -Nd 2 O 3 using the method of melt quenching, and developed a methodology for the control of the constituent material Auriuvilius and pyrochlore crystalline phases. The method is used to control the high-frequency dielectric characteristics [40]. Additionally, the glasscrystal materials for sensors in the system SiO 2 -Bi 2 O 3 -TiO 2 have been synthesized by a method of melt quenching and controlled crystallization of the glass and subsequent synthesis of thin layers by ink-screen-printing technique [41].…”
Section: Methodsmentioning
confidence: 99%
“…The dielectric properties of the samples in the system Bi 2 O 3 -TiO 2 -Nd 2 O 3 have been studied in frequency 2.7 GHz and control of dielectric parameters is realized by precise control of the percentage of initial oxides and synthesis temperatures [40]. Depending on the controlled melting conditions and additional heat treatment of the [19].…”
Section: Sem Images Of Zno With Carbon Additive (A) Zno With Carbon A...mentioning
confidence: 99%
“…The high-temperature ferroelectric Bi 4 Ti 3 O 12 is a candidate material for non-volatile memory (Kalinkin et al, 2013), microwave device applications (Kalinkin et al, 2013;Slavov et al, 2019), ultrasonic transducers and bolometric applications (Searfass et al, 2016;Chromik et al, 2018;Tittmann et al, 2018), photocatalysts (Lin et al, 2014;Cui et al, 2016), and optoelectronic devices (Al-Wafi, 2017). Chemical modification of BTO is actively being undertaken to reduce leakage currents and improve functional parameters (Glaum & Hoffman, 2014).…”
Section: Introductionmentioning
confidence: 99%