Bi0.5Sb1.5Te3-based films for flexible thermoelectric devices

Shang, Hongjing; Dun, Chaochao; Deng, Yuan; Li, Taiguang; Gao, Zhenyu; Xiao, Liye; Gu, Hongwei; Singh, David J.; Ren, Zhifeng; Ding, Fazhu

doi:10.1039/c9ta13152c

Cited by 69 publications

(44 citation statements)

References 56 publications

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“…As shown in Figure 5c, the x = 0.8 sample exhibited the largest f FOM among all Bi 2 Te 3 ‐based composite films ever reported. It was 2 to 3 orders of magnitude higher than Bi 2 Te 3 films made by magnetron sputtering [ 12 ] and screen‐printed Bi 2 Te 3 /organic binders film, [ 31 ] Bi 2 Te 3 /PEDOT, [ 14 ] Bi 2 Te 3 /PEDOT:PSS, [ 15 ] solvothermal deposited Bi 2 Te 3 /SWCNT films, [ 28 ] and one order of magnitude higher than Bi 2 Te 3 /CF, [ 16 ] sputtered Bi 2 Te 3 /SWCNT films, [ 32 ] and Bi 2 Te 3 /rGO. [ 33 ] It was attributed to the outstanding intrinsic flexibility of graphene, which provided a flexible substrate for bending deformation.…”

Section: Resultsmentioning

confidence: 99%

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Mao

Wang

Shi

et al. 2022

Adv Materials Inter

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Flexible thermoelectrics (TEs) that fit curved human skin well, could harvest energy from skin, and thus have been considered as a promising portable power source for wearable electronics. Bi2Te3, the most popular room‐temperature TE material, is still challenging to be applied in flexible devices due to its rigid nature. Although many Bi2Te3‐based films have been reported to be flexible when made thin enough, the thermal and electrical loads across them are rather small with severe limitation on the maximum power output. This work realizes a thick Bi2Te3‐based TE film with a “graphene/Bi2Te3/graphene” sandwiched structure, which demonstrates an unprecedentedly high figure of merit for flexibility among all Bi2Te3‐based films ever reported, due to the outstanding intrinsic flexibility of graphene and a small slippage barrier. Meanwhile, graphene acts as express conducting channels as well as carrier donors, resulting in an increased electrical conductivity. The numerous graphene/Bi2Te3 heterointerfaces induce energy filtering effect, leading to an enhanced Seebeck coefficient, and thus an optimized power factor is achieved. This work offers a cost‐effective avenue to make highly flexible TE films for power supply of wearable electronics by intercalating TE nanoplates into 2‐dimensional nanosheets.

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Section: Resultsmentioning

confidence: 99%

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Mao

Wang

Shi

et al. 2022

Adv Materials Inter

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“…Thus it is challenging to obtain large-area films. [20,21] On the other hand, classic bottom-up methods include chemical vapor deposition (CVD) [22] , magnetron sputtering [23,24] and molecular beam epitaxy [25] , etc. These methods usually require the high vacuum or complex equipment, largely limiting the practical applications.…”

Section: Soft Sciencementioning

confidence: 99%

Improved thermoelectric performance in n-type flexible Bi2Se3+x/PVDF composite films

Zou¹,

Shang²,

Huang³

et al. 2021

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“…Particularly, the power output of thinfilm Bi 0.5 Sb 1.5 Te 3 -Bi 2 Te 3 p-n junctions is only ≈200 μW cm −2 regardless of the high temperature difference (ΔT) of 40 K and high open-circuit voltage (V o ) of 40 mV. [19] Therefore, realizing the high room-temperature thermoelectric performance of both n-type Bi 2 Te 3 and p-type Bi 0.5 Sb 1.5 Te 3 thin films is of significance.…”

Section: Introductionmentioning

confidence: 99%

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi_0.5Sb_1.5Te₃‐Based Thin Films

Tan

Shi

Liu

et al. 2021

Advanced Energy Materials

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dominated by the dimensionless figure of merit, ZT = S 2 σT/κ, where S, σ, T, and κ are the Seebeck coefficient, electrical conductivity, absolute temperature, and total thermal conductivity, respectively. [2] Among them, S 2 σ, defined as the power factor, is used to evaluate the overall electrical performance, and κ is the accumulation of lattice thermal conductivity (κ l ) and electrical thermal conductivity (κ e ) as an overall estimation of the thermal performance. [3] To realize a high ZT, both a high S 2 σ and a low κ are required. However, these parameters are strongly interrelated, and the carrier concentration (n p for p-type semiconductors with holes as the main carriers and n e for n-type semiconductors with electrons as the main carriers) needs to be optimized in accordance with high carrier mobility (μ) and low κ l . [4] The n p and n e can be optimized by tuning the valence electron counts through cation and anion doping, which can lead to optimized S 2 σ. [5] The energy filtering effect can boost μ without significant deterioration of other properties, increasing S 2 σ. [6] Band engineering strategies, such as band convergence and resonant state engineering, can effectively increase S. [7,8] In terms of suppressing κ l , various scattering centers have been introduced into thermoelectric materials to strengthening phonon scattering at full wavelength scale (ranging from microscale to atomic scale) and miniaturize κ l . [9] Most typically, dense point defects introduced by doping/alloying, [10] corresponding dense dislocations, [11] and strain fields, [12] can effectively scatter short-wavelength phonons, and dramatically reduce κ l . Dense grain boundaries and interfaces introduced by nanostructuring and nanoprecipitates can strengthen mid-to long-wavelength phonon scattering. [13] Hierarchical architecture engineering, [14] the combination of these phonon scattering strategies, can dramatically reduce κ l to the amorphous limit and further contribute to high ZT values. [2] Bi 2 Te 3 -based thermoelectric materials, including p-type Bi 0.5 Sb 1.5 Te 3 -based and n-type Bi 2 Te 3 -based ones, have been extensively studied due to their high performance (room-temperature ZT > 1). [15] Both Bi 2 Te 3 and Bi 0.5 Sb 1.5 Te 3 have strong anisotropy, leading to high thermoelectric performance along the in-plane directions. [16] In recent years, Bi 2 Te 3 -based thin films are attracting increasing attention due to their considerable wearability and Bi 2 Te 3 -based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb-Te antisite doping are used to achieve a high room-temperature ZT of ≈1.5 in p-type Bi 0.5 Sb 1.5 Te 3 thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as-pre...

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Bi_0.5Sb_1.5Te₃-based films for flexible thermoelectric devices

Abstract: A flexible TE generator exhibits a high power density of 897.8 μW cm−2 at a relatively small ΔT of 40 K.

Cited by 69 publications

References 56 publications

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Improved thermoelectric performance in n-type flexible Bi2Se3+x/PVDF composite films

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi_0.5Sb_1.5Te₃‐Based Thin Films

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Bi0.5Sb1.5Te3-based films for flexible thermoelectric devices

Abstract: A flexible TE generator exhibits a high power density of 897.8 μW cm−2 at a relatively small ΔT of 40 K.

Cited by 69 publications

References 56 publications

Sandwiched Graphene/Bi2Te3/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Sandwiched Graphene/Bi2Te3/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Improved thermoelectric performance in n-type flexible Bi2Se3+x/PVDF composite films

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi0.5Sb1.5Te3‐Based Thin Films

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Product

Resources

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Bi_0.5Sb_1.5Te₃-based films for flexible thermoelectric devices

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Sandwiched Graphene/Bi₂Te₃/Graphene Thermoelectric Film with Exceptional Figure of Merit for Flexibility

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi_0.5Sb_1.5Te₃‐Based Thin Films