Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress
Hyunjin Kim,
Beom Jung Kim,
Jungyeop Oh
et al.
Abstract:Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel material for thin film transistors (TFTs). However, the instability mechanism involving threshold voltage and subthreshold swing in a-IGZO TFTs still requires further investigation. In this study, we investigated the electrical instability of amorphous InGaZnO thin film transistors subjected to alternating positive and negative bias stresses. Based on the respective mechanisms under positive and negative bias stresses, inclu… Show more
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