BH lasers with GaInAsP and GaInAs active layers grown by MOVPE using tertiarybutylarsine and tertiarybutylphosphine

Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures

“…The hazards involved have been a major concern in the MOCVD process. Thus, less toxic organic group-V MOCVD sources, such as tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), have been used to replace group-V hydride because of reduced hazards [5][6][7][8][9][10][11]. It has been shown that devices grown with TBAs and TBP have demonstrated state-of-the-art performances in InGaAsP and GaInAs/GaAs/GaInP lasers [7][8][9].…”

“…Thus, less toxic organic group-V MOCVD sources, such as tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), have been used to replace group-V hydride because of reduced hazards [5][6][7][8][9][10][11]. It has been shown that devices grown with TBAs and TBP have demonstrated state-of-the-art performances in InGaAsP and GaInAs/GaAs/GaInP lasers [7][8][9]. However, there have been few reports on high-quality AlGaInP/ GaInP quantum well structures grown by MOCVD with TBAs and TBP, which can be used for active layers of devices, such as light emitting diodes and LDs [10,11].…”

Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

“…Thus, less toxic organic group-V MOCVD sources, such as tertiarybutylarsine ͑TBAs͒ and tertiarybutylphosphine ͑TBP͒, have been used to replace group-V hydrides because of reduced hazards. [5][6][7][8][9][10][11] Devices grown with TBAs and TBP have exhibited state-of-the-art performances in In-GaAsP lasers and GaInAs/GaAs/GaInP lasers. [7][8][9] However, there have been few reports on high-quality GaInP/AlGaInP quantum well ͑QW͒ structures grown by MOCVD with TBAs and TBP, which can be used for active layers of devices, such as light emitting diodes ͑LEDs͒ and LDs.…”

MOCVD Growth of InP-Related Materials Using TEA and TBP

“…Moreover, lower ΤBΑ and TBP thermal stability comparing with hydrides enables lower temperature growth which is desirable for several reasons, such as suppression of dopant interdiffusion. Many results on MOVPE epilayers growth of GaAs, InP, InGaP, GaInAsP using ΤBΑ, TBP precursors have been reported in recent years [3][4][5][6]. However, there are a few papers on InGaAlP, a very attractive material for optoelectronics.…”