“…The wurtzite nanorods used for this study had a Cu-poor and Zn-rich composition which has lead to highest the solar cell power conversion efficiencies in the past [8,11]. To study the influence of the composition on the grain growth, also nanorods with Cu-rich composition were synthesized and a similar annealing study was performed.…”
Section: Resultsmentioning
confidence: 99%
“…The nanorods are re-dispersed in anhydrous toluene and stored in a glove box for the further experiment. The as-synthesized nanorod have a Cu/(Zn + Sn) ratio of 0.8 and a Zn/Sn ratio of 1.2, which is close to the thin film photovoltaic device with highest reported power conversion efficiencies [8,11]. For the copper-rich nanorod sample (Cu/(Zn+Sn)=1.05 and Zn/Sn=1]), copper(II) acetylacetonate (1.05 mmol), Zinc acetate (0.5 mmol), Tin(IV) acetate (0.5 mmol), TOPO (3.5 mmol), 10 mL of 1-octadecene and thiols mixture (0.25 mL 1-DDT and 1.75 mL t-DDT) were used.…”
Section: Synthesis Of Wurtzite Czts Nanorodsmentioning
“…The wurtzite nanorods used for this study had a Cu-poor and Zn-rich composition which has lead to highest the solar cell power conversion efficiencies in the past [8,11]. To study the influence of the composition on the grain growth, also nanorods with Cu-rich composition were synthesized and a similar annealing study was performed.…”
Section: Resultsmentioning
confidence: 99%
“…The nanorods are re-dispersed in anhydrous toluene and stored in a glove box for the further experiment. The as-synthesized nanorod have a Cu/(Zn + Sn) ratio of 0.8 and a Zn/Sn ratio of 1.2, which is close to the thin film photovoltaic device with highest reported power conversion efficiencies [8,11]. For the copper-rich nanorod sample (Cu/(Zn+Sn)=1.05 and Zn/Sn=1]), copper(II) acetylacetonate (1.05 mmol), Zinc acetate (0.5 mmol), Tin(IV) acetate (0.5 mmol), TOPO (3.5 mmol), 10 mL of 1-octadecene and thiols mixture (0.25 mL 1-DDT and 1.75 mL t-DDT) were used.…”
Section: Synthesis Of Wurtzite Czts Nanorodsmentioning
“…Recent advances in perovskite solar cells, in which an order of magnitude improvement in diffusion length enabled drastic PCE improvements on a planar architecture 60 , are consistent with this view. Improvements in PCE beyond these projections will require addressing the suboptimal open circuit voltage values, currently observed in all types of solution-processed thin-film PV: CQDs 5 , perovskites 60 , copper indium gallium selenide (CIGS) 61 , copper zinc tin sulfide (CZTS) 62 and polymers 63 .…”
Colloidal quantum dots are attractive materials for efficient, low-cost and facile implementation of solution-processed optoelectronic devices. Despite impressive mobilities (1-30 cm 2 V À 1 s À 1 ) reported for new classes of quantum dot solids, it is-surprisingly-the much lower-mobility (10 À 3 -10 À 2 cm 2 V À 1 s À 1 ) solids that have produced the best photovoltaic performance. Here we show that it is not mobility, but instead the average spacing among recombination centres that governs the diffusion length of charges in today's quantum dot solids. In this regime, colloidal quantum dot films do not benefit from further improvements in charge carrier mobility. We develop a device model that accurately predicts the thickness dependence and diffusion length dependence of devices. Direct diffusion length measurements suggest the solid-state ligand exchange procedure as a potential origin of the detrimental recombination centres. We then present a novel avenue for in-solution passivation with tightly bound chlorothiols that retain passivation from solution to film, achieving an 8.5% power conversion efficiency.
“…This is because they contain relatively earth abundant elements, are easy to grow, and have suitable direct band gap energies in the range of 1 to 1.5 eV at their ground state, [1][2][3][4][5] which are optimal for single junction solar cell applications. 3,6 However, despite the recent extensive study and rapid progress in development of this new solar cell technology, its power conversion efficiency is still lower than the more mature technologies, such as binary CdTe or ternary Cu(In 1-x Ga x )Se 2 (CIGSe) based solar cells.…”
Using first-principles calculations and symmetry analysis, we show that as cation atoms in a zincblende-based semiconductor are replaced through atomic mutation (e.g., evolve from ZnSe to CuGaSe 2 to Cu 2 ZnGeSe 4 ), the band gaps of the semiconductors will become more and more indirect because of the band splitting at the zone boundary, and in some cases will even form the segregating states. For example, although ZnSe is a direct band gap semiconductor, quaternary compounds Cu 2 ZnGeSe 4 and Cu 2 ZnSnSe 4 can be indirect band gap semiconductors if they form the primitive mixed CuAu ordered structures. We also find that the stability and the electronic structure of the quaternary polytypes with different atomic ordering are almost negative-linearly correlated. We suggest that these intrinsic properties of the multi-cation semiconductors can have a large influence on the design and device performance of these materials.2
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.