Betavoltaic energy conversion

Olsen, L. C.

doi:10.1016/0013-7480(73)90010-7

Cited by 104 publications

(85 citation statements)

References 3 publications

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“…As a result, a variety of nuclear-based smallscale power sources have been developed with varying degrees of success and maturity. A nuclear battery with a diode junction is a device that converts nuclear radiation directly into electric power [2]. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application.…”

Section: Introductionmentioning

confidence: 99%

“…In betavoltaic battery, beta particles are collected and converted to electrical energy through a similar principle as photovoltaic. A very low current, on the order of nano or micro amperes, is generated in devices [2,3]. If a radioisotope (RI) with a long half-life (over 50 years) is used, a lifetime of a power source is extended as long as half-life time of RI [4].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Ni Seed Layer for Electroplating 63Ni in Beta Voltaic Battery

Uhm

Choi

Son

et al. 2015

2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014)

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Ni seed layers with a thickness of 200, 500, and 1000 Å were deposited by e-beam irradiation on a single trench P-N absorber in a beta voltaic battery. The optimum thickness of 63 Ni on the seed layer was determined to be about 2 μm regarding the minimum self-shielding effect of a beta-ray (β-ray). The electroplating was carried out using two-step processes such as preparation of ionic solution including 63 Ni, and coating processes on the seed layer. The electroplating of Ni on the seed layer was carried out at current density of 20 mA/cm 2 . Both the conductivity and uniformity of the seed layer are enhanced, as the thickness of deposit layer is increased. However, self-shielding of β-ray from measuring photo-voltaic (I-V curves) is significantly increase, as the thickness of the seed layer become thick. To fabricate the effective β-voltaic battery, the thickness of seed layer about 500 Å has been determined in view of both preventing self-shielding β-ray and increasing conductivity on the surface.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Ni Seed Layer for Electroplating 63Ni in Beta Voltaic Battery

Uhm

Choi

Son

et al. 2015

2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014)

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“…Furthermore, since radioisotope fuels are available as thin-films, they can be integrated directly into microsystems. And most significantly, microbatteries such as Promethium-147 ( 147 Pm) powered betavoltaics can be made safe enough to be deployed in implantable cardiac pacemakers [3].…”

Section: Introductionmentioning

confidence: 99%

“…We choose betavoltaic converters because they can be compact, and can be fabricated easily in established microfabrication technology. 147 Pm powered betavoltaics developed in the past for powering cardiac pacemakers had 6-8 year lifetimes and 50-100 µW/cc power density [3]. They employed planar betavoltaics, and their power density was low both because of low fuel fill factor and low conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

3D Silicon Betavoltaics Microfabricated using a Self-Aligned Process for 5 Milliwatt/CC Average, 5 Year Lifetime Microbatteries

Duggirala

Tin

Lai

2007

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

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We report on the first demonstration of high efficiency 3D silicon betavoltaics, microtextured with deep reactive ion etched (DRIE) trenches, for potential application in 5 year lifetime 5 mW/cc Promethium-147 powered microbatteries. Prototype 3D silicon betavoltaics were designed and microfabricated in a 2-mask self-aligned process, and characterized using accelerated electron beams in a scanning electron microscope to yield 1.02% conversion efficiency @ 30 kV acceleration voltage.

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“…, when I=0, the open circuit voltage V oc is And because the series resistance R s is much less than the shunt resistance R sh (R s typically 1-20 for betavoltaic cell)[13], when V=0, the short circuit current I sc is…”

mentioning

confidence: 99%

Demonstration of a GaN betavoltaic microbattery

Cheng

Zhao

San

et al. 2011

2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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A GaN-based betavoltaic microbattery was demonstrated. The wide-band gap semiconductor of GaN and pure beta radioisotope source of 63 Ni were used as the converter and the energy source. The GaN-based p-i-n junction wafers were epitaxially grown by metal-organic, chemical-vapor deposition (MOCVD) on the 2-inch c-plane sapphire substrates. Under the irradiation of an activity of 2mCi (about 0.13mCi/mm 2 ) 63 Ni source, an open-circuit voltage of 474mV and a short-circuit current density of 17nA/cm 2 were measured in a fabricated single 1×1 mm 2 cell, and the calculated conversion efficiency of 1.8% lower bound can be obtained. The results suggest that the wide-band gap semiconductor of GaN is a high potential candidate of betavoltaics for big open-circuit voltage and high efficiency.

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Betavoltaic energy conversion

Cited by 104 publications

References 3 publications

Effect of Ni Seed Layer for Electroplating 63Ni in Beta Voltaic Battery

Effect of Ni Seed Layer for Electroplating 63Ni in Beta Voltaic Battery

3D Silicon Betavoltaics Microfabricated using a Self-Aligned Process for 5 Milliwatt/CC Average, 5 Year Lifetime Microbatteries

Demonstration of a GaN betavoltaic microbattery

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