Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K

Graff, K.; Grallath, E.; Ades, S.; Goldbach, G.; Tölg, G.

doi:10.1016/0038-1101(73)90095-6

Cited by 104 publications

(28 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is noted that [128,129] as well as [130,131] contain the same data respectively, so that only one set of each was taken into account. No explicit data are given by [132][133][134][135][136][137][138]. The available data points are presented in Fig.…”

Section: The Phases (Si) and Liquid: Oxygen Solubilitymentioning

confidence: 99%

Thermodynamics and phase stability in the Si–O system

Schnurre

Gröbner

Schmid–Fetzer

2004

Journal of Non-Crystalline Solids

136

View full text Add to dashboard Cite

Section: The Phases (Si) and Liquid: Oxygen Solubilitymentioning

confidence: 99%

Thermodynamics and phase stability in the Si–O system

Schnurre

Gröbner

Schmid–Fetzer

2004

Journal of Non-Crystalline Solids

136

View full text Add to dashboard Cite

“…We also included a few samples with a high carbon concentration in the range (5-50) x 10'6 at/cm . The concentration of interstitial oxygen and substitutional carbon was monitored by measuring the wellknown absorption bands at 1107 [9] and 605 cm ' [10], respectively. The spectrometer used for the IR studies was a Bruker Fourier transform IR ) 13v.…”

mentioning

confidence: 99%

Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation

Lindström

Hallberg

1994

Phys. Rev. Lett.

View full text Add to dashboard Cite

Clustering of oxygen atoms in silicon at 450 C has been correlated with a group of infrared vibrational absorption bands observable at room temperature. The bands are related to the formation of thermal donors and show a good correlation with results from diAerent experimental techniques. It is suggested that three categories of thermal donors are developing corresponding to absorption bands at about 975, 988, 1000, 1006, and 1012 cm PACS numbers: 61.72.Ji, 61.72.Cc, 78.50. -Oxygen is an important impurity in silicon materials used for integrated circuits due to its beneficial effects such as wafer hardening and intrinsic gettering. However, in a very large temperature range (up to 1200'C) the solution of interstitial oxygen in silicon remains highly supersaturated. At temperatures where oxygen becomes mobile ()350'C) aggregation of oxygen atoms starts, which can cause harmful effects in circuit performance. Future processing (high complexity, low temperature processing) requires a deeper knowledge about the nature of these defects. The clustering of oxygen atoms in Czochralski grown (Cz) silicon has been widely studied [1]. At high temperature treatments (800-100'C) different quartz precipitates have been observed to form and at lower temperatures smaller clusters are developing, giving rise to the new donors (ND) (550-750'C), the thermal donors (TD), and the shallow thermal donors (STD) (350-500 C). The TDs in silicon. are probably among the most studied defects in semiconductors [2,3]. The experimental studies have included techniques such as resistivity measurements, infrared absorption spectroscopy, photoluminescence, electron paramagnetic resonance, electron nuclear double resonance, Hall effect, deep level transient spectroscopy, and photothermal ionization spectroscopy. The structure of these defects is suggested to be a core to which oxygen atoms aggregate to form a series of closely related donor structures. Several core models have been presented [1-3] but so far no model has been experimentally verified. Very detailed information about these defects comes from electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy at low temperatures. IR spectroscopy results show many absorption bands related to electronic transitions which have been systematically studied and ordered into an effective masslike series corresponding to at least nine different double donors, TDI-TD9 [1]. Several models have been presented on the growth kinetics of TDs [1-3] trying to tie the clustering of oxygen to the TD formation kinetics. Most models use a serial formation process instead of parallel processes [41.Oxygen in silicon is known to give rise to several vibrational IR absorption bands both as an interstitial atom and in combination with vacancies [5] or with impurity atoms [6). Also the formation of oxygen precipitates in the range 800-1000'C is known to give rise to different IR absorption bands [7,8]. However, no oxygen related vibrational absorption band has so far been correlated with the formation of T...

show abstract

“…The correction procedure taking into account deviations in free carrier absorption between the measurement sample and the reference sample corresponds to that applied in Eq. [4] ........ = -ao 9 d. ha + ao [7] The following example may show that the effect of deviation in free carrier absorption can be pronounced and may exceed that of thickness deviations as already mentioned in Ref. (4).…”

Section: Deviation Inmentioning

confidence: 88%

Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry

Schomann¹,

Graff²

1989

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

In order to achieve a high multilaboratory precision in measuring the oxygen content in CZ silicon slices and wafers by means of IR absorption spectroscopy various deviations from ideal measurement conditions are discussed and correction methods are presented. The main sources for measurement errors exceeding _+ 1% standard deviation are: the radiation scattering at rough wafer reverse sides, the sample temperature during the measurement, the free carrier absorption if the carrier concentration exceeds 1015 cm -3, and the residual oxygen concentration in the reference sample if this consists of a common FZ silicon material. Less important are thickness deviations between sample and reference, spectral resolution, and instrumental errors for modern spectrometers. After applying all corrections, a multilaboratory precision in dispersive spectrometers of -< -+ 1 and -< _+ 2.5% is expected for both sides polished 2 mm thick silicon slices and one-side polished silicon wafers, respectively.Accurate knowledge of the dissolved and the precipitated oxygen concentration in Czochralski-grown (CZ) silicon crystals has become important with the development of the internal gettering technique. Since the internal getter efficiency is highly dependent on the initial interstitial oxygen content of the crystals, the silicon suppliers offer crystals with specified oxygen concentration. The common tolerance of this specification amounts to _+ 20% but tolerances of +_ 10% are also available.In order to use the measured data to adequately control oxygen in the ingots the multilaboratory measurement precision should be well below 10%. In the Annual Book of ASTM Standards (1) a single instrument precision of -+ 3% and a multilaboratory precision of +10% is expected. Therefore the silicon suppliers make arrangements with their customers to determine individual calibration curves of higher precision which is time-consuming and expensive.One reason for the disagreement of results is the multiplicity of spectrometers used and, hence, the differing measurement conditions which so far can not be taken into account for the correction of the various results.Several round robins have been organized recently by BCR (Community Bureau of Reference, Brussels, Belgium) in order to certify the oxygen content in standard silicon slices. The measurements have been performed in selected laboratories in Europe following guide lines given by B. Pajot, University of Paris. For nearly constant measurement conditions, a single instrument precision of -<0.3% was obtained. A multilaboratory precision of -<5% was achieved including all results of dispersive and Fourier transform spectrometers. The results obtained by means of dispersive spectrometers, however, agreed within a standard deviation of +-0.8% whereas the Fourier transform spectrometers exhibited a larger deviation from the mean value between +2.5 and +4.8%.In order to achieve a measurement precision of about 1%, the influence of the various parameters on the resulting oxygen content must be investig...

show abstract

Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K

Cited by 104 publications

References 19 publications

Thermodynamics and phase stability in the Si–O system

Thermodynamics and phase stability in the Si–O system

Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation

Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry

Contact Info

Product

Resources

About