Bestimmung der Pinhole‐Dichte von Isolatorschichten durch chemisches Ätzen (I). Das System Silizium‐Siliziumdioxid

Abstract

By means of a mixture of ethylene diamine, pyrocatechin and water, as a structure etchant for silicon, the number of pinholes in silicon dioxide films produced by thermal oxidization and h. f.-sputtering u.as determined. Etching rates for (1 11) oriented silicon and SiO, layers are reported.