Best focus alignment through pitch strategies for hyper-NA EUV lithography
Inhwan Lee,
Joern-Holger Franke,
Vicky Philipsen
et al.
Abstract:To print ever smaller features at high contrast, projection lithography technology has been developed to allow use of shorter wavelength light and to increase numerical aperture (NA) from 0.33 to 0.55. After enabling EUV wavelengths, to keep up with the scaling trends the industry would now again like to increase the NA. Since the depth of focus (DoF) is inversely proportional to the square of NA, in hyper NA EUV lithography (EUVL), we anticipate that the total available DoF in the lithography process would be… Show more
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