2014
DOI: 10.1016/j.pquantelec.2014.07.001
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Bessel beams from semiconductor light sources

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Cited by 20 publications
(14 citation statements)
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“…In our earlier experiments we demonstrated optical trapping with Bessel beams generated from semiconductors lasers [20][21][22]. In this work we utilize a superfocused high-M 2 laser diode beam for optical trapping and manipulation of microscopic biological objects.…”
Section: Methodsmentioning
confidence: 99%
“…In our earlier experiments we demonstrated optical trapping with Bessel beams generated from semiconductors lasers [20][21][22]. In this work we utilize a superfocused high-M 2 laser diode beam for optical trapping and manipulation of microscopic biological objects.…”
Section: Methodsmentioning
confidence: 99%
“…We used three different positive lenses with focal lengths of 15.4, 50, and 100 mm; we set the distance between the pinhole and collimation lens according to these focal lengths. Increasing the focal length of the collimation lens provides beams with larger diameters and longer Bessel zones, as well as larger coherence areas [11].…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Various types of LEDs are shown to be capable of forming Bessel beams [10], the depth of the nondiffracting zone being strongly dependent on the emitter profile. In a more extensive work, performances of LEDs and laser-type semiconductor sources (lasers diodes or LDs) are compared [11].…”
Section: Introductionmentioning
confidence: 99%
“…5. One can observe that the large angle leads to forwardpropagated laser light; moreover, such pointed needle could provide some kind of a Bessel beam of a first order with its benefits of low-diffraction caustic; [55][56][57] in turn the small angle might lead to the extreme light confinement and, thus, to a specific localization of tissue exposure. It is interesting that the needle with l ¼ 2.0 mm combines diffused and forward components simultaneously.…”
Section: Study Of Radiation Patterns Formed By Sapphire Needlesmentioning
confidence: 99%