Beryllium substitution-mediated covalency engineering of II–VI alloys for lattice elastic rigidity reinforcement

First principles study of structural and electronic properties of Bex Zn1–xS and Bex Zn1–xTe alloys

“…It is very clear from Fig. 3 that the value of the bulk modulus increases with increasing Be concentration, confirming the suggestion of Vèrié [1] that states that adding beryllium to II-VI compounds improves their hardness. A large deviation from Vegard's law is clearly visible, with an upward bowing parameter for the lattice constant parameter and a downward bowing for the bulk modulus.…”

FP‐LAPW investigations of Zn1–xBexS, Zn1–xBexSe and Zn1–xBexTe ternary alloys

“…Our results show that the bulk modulus of Zn 1-x Be x S, Zn 1-x Be x Se and Zn 1-x Be x Te alloys increases with increasing the Be concentration x(0 ≤ x ≤ 1). This behavior confirms the suggestion of Vèrié [4,5] about adding beryllium chalcogenides to II-VI laser diodes in order to improve their hardness and lifetime.…”

“…Devices based on II-VI semiconductors, such as ZnSe laser diodes, have a reduced lifetime compared to those based on III-V semiconductors; this is due to defect formation favored by the high ionicity and the smaller bond energies of conventional II-VI materials [1][2][3]. After an examination of the covalency and ionicity of semiconductor materials, Vèrié [4,5] proposed introducing beryllium chalcogenide alloys to the laser structures in order to increase the resistance of the structures to defect generation and propagation.…”

An EXAFS study of the structure of the Zn1-xBexSe alloy system

“…the shear modulus of BeSe is 42. 6 GPa as compared to 18.35 GPa for ZnSe [2]. Besides its technological importance, the Raman data of this material system shows a novel and atypical three mode behavior, ie, a single mode for Zn-Se bond and a two-mode behavior for the Be-Se bond [3] in complete contradiction to the Modified Random Element Isodisplacement (MREI) model [3].…”