Beryllium Oxide

Kaczynski, Donald J.; Walsh, Kenneth A.

doi:10.1002/9780470320297.ch8

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“…BeO was heavily researched in the 1960s and 1970s, with experiments dating back to the 1920s, due to its possible nuclear applications with its hardness to sustained radiation effects. Several papers effectively captured electrical resistivity data of large temperature ranges, some reaching 2000 • C. 13,14 AlN and Si 3 N 4 were focused on as potential substrate and packaging materials in the late 1980s, with additional applications as transducers and refractories. 13,15 Y 2 O 3 and SiO 2 are interesting candidates, 9,16 yet mismatches in coefficient of thermal expansion (CTE) have prevented widescale adoption as packaging materials.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects on electrical resistivity of selected ceramics for high‐temperature packaging applications

Deucher,

Okojie

2023

J Am Ceram Soc.

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We report the results of the characterization of the electrical resistivity of selected ceramic materials, namely aluminum nitride (AlN), silicon nitride (Si₃N₄), beryllium oxide (BeO), yttrium oxide (Y₂O₃), and non‐ceramic silicon dioxide (SiO2), which are candidates for packaging silicon carbide (SiC) sensors and electronics that can operate at temperatures beyond 800°C. Samples of these materials were thermally cycled twice to 1200°C in nitrogen while the bulk and surface resistivities were measured in situ. Although the resistivity values of all samples dropped with increasing temperature, BeO maintained the relatively highest bulk and surface resistivity values at 1200°C of 28 and 34 kΩ cm, respectively, while AlN had the lowest values at 6.8 and 0.64 kΩ cm. In terms of viability for packaging SiC sensors for >800°C operation, AlN and Si₃N₄ are the choice candidates due to their lowest mismatches in the coefficient of thermal expansion with SiC. However, the relative resistivity stability of Si₃N₄ over AlN makes it a promising candidate, even with its lower thermal conductivity relative to AlN.

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