Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

Marcon, J.; Koumetz, S.; Ketata, K.; Kétata, M.; Launay, P.

doi:10.1016/s0921-5107(96)01805-3

Cited by 2 publications

(4 citation statements)

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“…13 By considering the results associated with superlattice disordering, Yu et al 15 concluded that Be diffusion in GaAs is governed by the latter mechanism. This conclusion has received large consent in the literature, 14,17,21 so that in this work the kick-out mechanism is assumed to determine the interchange between Be i and Be s according to the reaction:…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…The procedure described above will be hereafter referred to as ''usual,'' since it is based on the same physical assumptions made by several authors. [15][16][17]21 Nevertheless, there are two original features of our calculation method that deserve a brief comment. The former is the introduction of the variable .…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…This is a slight modification of the conventional method that significantly improves the simulation procedure since it allows to reduce to three the number of fitting parameters, which should otherwise be four. [15][16][17]21 The latter feature is the use of K as a fitting parameter. Indeed, in the literature K is calculated by the expression:…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…15 This procedure, which is based on a set of equations that can be easily solved by an explicit finite-difference method, has been successfully used to model Be diffusion in InGaAs and InGaAsP layers, which underwent rapid thermal processing ͑RTP͒ experiments. 16,17 In the present article, Be diffusion in GaAs structures grown by MBE is simulated by using a modified version of this latter procedure. Section III briefly reviews the results of secondary ion mass spectrometry ͑SIMS͒ measurements performed after the p/p ϩ and p/p ϩ /p structures described in Sec.…”

Section: Introductionmentioning

confidence: 99%

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Be diffusion in molecular beam epitaxy-grown GaAs structures

Mosca

Bussei

Franchi

et al. 2003

Journal of Applied Physics

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Beryllium diffusion is considered in heavily doped p-type GaAs structures grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) measurements performed on samples which underwent rapid thermal processing (RTP) experiments at 850 °C for 30 s show that (i) Be diffusion is faster in p/p+/p structures than in p/p+ ones and (ii) an increase of the As4/Ga flux ratio during the MBE growth affects Be diffusion only in p/p+ structures. These results are discussed by modeling Be diffusion according to a substitutional–interstitial diffusion mechanism where Be transition from substitutional to interstitial takes place by a kick-out process. The modeling procedure, which has been previously used to simulate Be and Zn diffusion in GaAs and in other related compounds, has been modified in order to account for the lacking of equilibrium in the initial concentration of Ga interstitials. It is shown that when the lacking of equilibrium is accounted for at the beginning of the annealing experiment, a satisfactory description of the SIMS results has been achieved in both p/p+ and p/p+/p structures, also considering samples grown by different As4/Ga flux ratios. The modeling results allow us to conclude that in the p/p+/p structures the concentration of point defects (e.g., IGa) in the regions cladding the base layer affects, to a major extent, Be diffusion during RTP, so that an efficient reduction of Be diffusivity is expected only when the whole structure is grown by high V/III flux ratios.

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