BER in Slow-Light and Fast-Light Regimes of Silicon Photonic Crystal Waveguides: A Comparative Study

You, Jinhong; Panoiu, Nicolae C.

doi:10.1109/lpt.2017.2702756

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…[14,15] In particular, the strong light confinement enables the dispersion engineering in silicon-on-insulator (SOI) WGs either by changing the transverse size of the WGs or by nanopatterning them. [16][17][18] Furthermore, the SOI WGs possess very large third-order nonlinearities, allowing for the implementation of key active and passive optical functionalities embracing Raman amplification, [19] four-wave mixing (FWM), [20] self-phase modulation, [21] cross-phase modulation, [22] two-photon absorption, [23] and pulse self-steepening. [24] In addition to the SOI WGs, SiO 2 , Si 3 N 4 , GeSi, and Ge-on-Si are also the materials frequently utilized in Si photonics.…”

Section: Introductionmentioning

confidence: 99%

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

You¹,

Luo²,

Yang³

et al. 2020

Laser & Photonics Reviews

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Silicon (Si) photonics have established as leading technologies in addressing the rapidly increasing demands of huge data transfer in optical communication systems with compact footprints, small power consumption, and ultradense bandwidth, which are driven by the next generation supercomputers and big data era. Particularly, Si photonics will penetrate into optical communication links at an ever-small scale, namely chip-to-chip and on-chip. However, the nanostructures made of Si with an indirect bandgap are not ideal candidates for on-chip light sources, modulators, and photodetectors, which most-frequently require optical materials with direct bandgap. Thanks to the advent of graphene, transition metal dichalcogenides and other two-dimensional (2D) materials, which can facilitate extraordinary progresses in improving device performance at the ultrathin scale, their integration with Si photonics furnishes a heterogeneous platform to construct fully functional and highly integrated photonic communication systems. In this work, the current advancements in the on-chip applications of Si photonics-2D materials heterostructures, inclusive of all essential chip-scale modules and integrated circuits, as well as the future prospective and challenges are reviewed and discussed. The present study sets out to objectively measure the feasibility of the hybrid integration between Si photonics and 2D materials in on-chip optical communications and the advanced applications beyond.

show abstract

Section: Introductionmentioning

confidence: 99%

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

You¹,

Luo²,

Yang³

et al. 2020

Laser & Photonics Reviews

Self Cite

View full text Add to dashboard Cite

show abstract

Nonlinear optical phenomena in subwavelength photonic nanowires

Osgood,

Dadap,

Panoiu

2024

Fundamentals and Applications of Nonlinear Nanophotonics

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BER evaluation in a multi-channel graphene-silicon photonic crystal hybrid interconnect: a study of fast- and slow-light effects

You¹,

Tao

Luo³

et al. 2020

Opt. Express

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A comprehensive theoretical investigation on the bit-error ratio (BER) performance of multi-channel photonic interconnects operating in pulsed regimes is presented. Specifically, the optical link contains either a silicon photonic crystal (SiPhC) or a SiPhC-graphene (SiPhC-GRA) waveguide, possessing slow-light (SL) and fast-light (FL) regimes. A series of Gaussian pulses plus complex white noise are placed at input of each channel, with output signals demultiplexed and analyzed by a direct-detection receiver. Moreover, a rigorous theoretical model is proposed to measure signal propagation in SiPhC and SiPhC-GRA, which incorporates all crucial linear and nonlinear optical effects, as well as influences of free-carriers and SL effects. BER results of multi-channel systems are evaluated by utilizing the Fourier series Karhunen-Loeve expansion method. Our findings reveal that good BER performance is acquired at SiPhCs and SiPhC-GRAs in SL regimes but with their footprint about 2.5-fold smaller than FL waveguides. Moreover, the enhanced nonlinearity in SiPhC-GRAs induced by strong graphene-SiPhC coupling causes extra signal degradation than SiPhCs at the same length. This work provides additional insights into the coupling effect between SiPhCs operating in SL regimes and graphene, and their influence on WDM signal transmission, highlighting the potential applications of SiPhC-GRA interconnects in next-generation super-computing systems.

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BER in Slow-Light and Fast-Light Regimes of Silicon Photonic Crystal Waveguides: A Comparative Study

Cited by 3 publications

References 21 publications

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

Nonlinear optical phenomena in subwavelength photonic nanowires

BER evaluation in a multi-channel graphene-silicon photonic crystal hybrid interconnect: a study of fast- and slow-light effects

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