Benefits of high-voltage SiC-based power electronics in medium-voltage power-distribution grids

Abstract

Medium-voltage (MV) power electronics equipment has been increasingly applied in distribution grids, and high-voltage (HV) silicon carbide (SiC) power semiconductors have attracted considerable attention in recent years. This paper first overviews the development and status of HV SiC power semiconductors. Then, MV power-converter applications in distribution grids are summarized and the benefits of HV SiC in these applications are presented. Microgrids, including conventional and asynchronous microgrids, that can fully demonstrate the benefits of HV SiC power semiconductors are selected to investigate the benefits of HV SiC in detail, including converter-level benefits and system-level benefits. Finally, an asynchronous microgrid power-conditioning system (PCS) prototype using a 10 kV SiC MOSFET is presented.

10 kV SiC MOSFET Based Medium Voltage Power Conditioning System for Asynchronous Microgrids

“…A case study in [21] shows that, at converter level, for a 1 MW MV PCS, the SiC based PCS solution can achieve >80% weight and size reduction and >10X control bandwidth compared with Si based PCS solution. At system level, simulation studies demonstrate that the higher control bandwidth offered by the HV SiC MOSFET enables more grid support functions of the PCS including power quality improvement, system stability enhancement, and dynamic performance improvement in fault ride-through, mode transition, and black start.…”

A Comprehensive Review of Control Strategies and Optimization Methods for Individual and Community Microgrids

“…Therefore, MGs develop great changes in the paradigm of conventional power systems. The unilateral power flow between power plants and consumers has changed to the reciprocal power flow between the power system and MGs [4,5].…”

Very large-scale gap distances of atmospheric pressure dielectric barrier glow discharge using semiconductor materials

“…The deepness of the shallow traps is typically 1-2 eV from the void level [27] while the valence band is at 6-8 eV [28]. The cooled dielectric helps the trapped electrons to avoid escape prematurely [29], i.e., the heated dielectric helps to rapidly produce the secondary electrons. However, more electrons are trapped and released under special conditions [30].…”

“…Especially, with d = 70 mm, at the bare electrode of the high voltage, the tip discharges, i.e., the corona discharge generates. In this case, because the heated dielectric helps the trapped electrons to escape from the shallow traps of the dielectric surface [29], the corona discharge extinguishes after a few seconds, and then the plasma appears between the electrodes. Even the increase of the gas flow rate will not help.…”

“…According to the proportional relationship of V g and d, when d ≤ 50 mm, the gas impedance between the electrodes increases with V g . Therefore, when d > 70 mm and the gas impedance increases more, V a exceeds the air breakdown threshold, and the number of electrons escaping from the dielectric surface due to the heating effect is less than that of the induced discharge channel [29], causing the DBD to not work.…”