Benefits of Flat Polymer Dielectric Surface Loading Organic Semiconductors in Field-Effect Transistors Prepared by Electrode-Peeling Transfer

Abstract

The theoretical equation of thermosonic bond strength involving interfacial deformation and microcontact phenomena is presented in this study. The constitutive equation of gold considering the ultrasonic softening mechanism was developed based on the thermosonic bonding experiments and coded into the FE software. The numerical model of bonding was established to estimate the surface exposure and the effective normal pressure. The real contact area was calculated by a microcontact model. Accordingly, the nominal bond strength can be obtained and verified by the experimental data. It is found that a better conjunction exists at the edge of the contact area because large surface exposure is produced there, which is also proved by the SEM image of a sheared ball bond. Increasing the bonding force or the ultrasonic power will increase the interfacial plastic deformation, the nominal and real contact areas, but decreases the effective normal pressure. The contact ratio increases to a maximum with the increase in the bonding force, and then decreases while it continues to decrease with the increase in the ultrasonic power. In addition, both the stress analysis and experimental result show that cratering and damage to the pad structure are easily produced below the edge region of the contact area under an excessive bonding force or ultrasonic power.

The Effect of Gate‐Dielectric Surface Energy on Pentacene Morphology and Organic Field‐Effect Transistor Characteristics

“…[15,16] To investigate the influence of the surface energy of the gate dielectric on the morphology of the grown pentacene film and OFET device performance effectively, the surface roughness of gate dielectrics with different surface energies must be similar. [a] c p s and c d s are the polar and dispersion components of the surface energy, respectively.…”

Giant Domain Formation in a Thin Film of Bisstyrylanthracene Derivatives by a Simple Melt Process

“…Especially in organic thin film field effect transistor (FET), wide variety of device structure has been demonstrated [1]. For example, it was fabricated on a flexible substrate [2,3], was embedded electrodes into polymer films [4], or was integrated with a light emitting diode [5]. One of the substantial advantages of using organic materials is such wide variation of device design.…”

Enhancement of the Physical Properties of Poly((2-terthiophenyl)norbornene) through Cross-Linking Pendant Terthiophenes

“…Recently, terthiophene polymers have been used successfully in the making of white and multicolor OLED devices. However, potential problems with the use of these “native” conducting polymers in thin-film applications include the wide range of conjugation lengths and the lack of surface uniformity (i.e., high roughness) which can make the fine-tuning of electrooptic properties and device applications difficult. − Recent work has shown that addition of alkyl chains to the thiophene subunits or bridging polymers with conducting cross-links allows for the tuning of polymer conductivity, processability, and local morphology.…”