Benefit of combining metrology techniques for thin SiGe:B layers

Cunff, Delphine Le; Nguyen, T.; Duru, Romain; Abbate, F.; Hoglund, Jonny; Nicolas, Laurent; Pernot, Frederic; Wormington, Matthew

doi:10.1109/asmc.2014.6846972

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) 2014

DOI: 10.1109/asmc.2014.6846972

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Benefit of combining metrology techniques for thin SiGe:B layers

Delphine Le Cunff

T. Nguyen

Romain Duru

et al.

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Benefit of combining metrology techniques for thin SiGe:B layers

Cited by 1 publication

References 8 publications

Stress control metrology in epitaxy

Stress control metrology in epitaxy

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