Abstract:As the technology of flexible electronics has remarkably advanced, the long-term reliability of flexible devices has attracted much attention, as it is an important factor for such devices in reaching real commercial viability. To guarantee the bending fatigue lifetime, the exact evaluation of bending strain and the change in electrical resistance is required. In this study, we investigated the bending strains of Cu thin films on flexible polyimide substrates with different thicknesses using monolayer and bila… Show more
“…To gain fundamental insight into the nature of the semiconductor‐metal junction under applied tensile strain, we first fabricated the two‐terminal MoS 2 monolayer device using gold electrode on a flexible polyimide (PI)/PET substrate ( Figure a; Figure S4, Supporting Information) and measured its electrical properties upon each applied tensile strain. It should be noted that the applied strain was limited to 0.7% to avoid sample slippage [ 29,30 ] and rupture of electrodes [ 31 ] and to sorely focus on the strain effects. Figure 2b shows the current, I , as a function of bias voltage, V b , on a logarithmic scale which is measured under tensile strain.…”
Flexible electronics and optoelectronics based on monolayered, semiconducting transition metal dichalcogenides (TMDCs) channel have recently received attention as the 2D structure possess superior mechanical, optical, and electrical properties. However, there is a lack of understanding of strain-dependent electrical and photoelectrical properties in the electrode-TMDC channel system. Here, two-terminal flexible device is fabricated and strain-engineered contact barrier modulation between monolayer MoS 2 channel and Au electrode is shown. It is found experimentally through in situ strain electrical and kelvin probe force microscope measurements that tensile strain lowers the contact energy barriers between MoS 2 and Au, in which the changes in the contact barriers is attributed to the strain-induced increase of the electron affinity in MoS 2 monolayer. Furthermore, the strain-induced barrier modulation is also shown to affect photoresponse behaviors in a MoS 2 flexible photodetectors through bending of energy bands that affect photogenerated carrier transport and electron-hole recombination. These findings present important pathway toward designing flexible devices based on 2D TMDCs.
“…To gain fundamental insight into the nature of the semiconductor‐metal junction under applied tensile strain, we first fabricated the two‐terminal MoS 2 monolayer device using gold electrode on a flexible polyimide (PI)/PET substrate ( Figure a; Figure S4, Supporting Information) and measured its electrical properties upon each applied tensile strain. It should be noted that the applied strain was limited to 0.7% to avoid sample slippage [ 29,30 ] and rupture of electrodes [ 31 ] and to sorely focus on the strain effects. Figure 2b shows the current, I , as a function of bias voltage, V b , on a logarithmic scale which is measured under tensile strain.…”
Flexible electronics and optoelectronics based on monolayered, semiconducting transition metal dichalcogenides (TMDCs) channel have recently received attention as the 2D structure possess superior mechanical, optical, and electrical properties. However, there is a lack of understanding of strain-dependent electrical and photoelectrical properties in the electrode-TMDC channel system. Here, two-terminal flexible device is fabricated and strain-engineered contact barrier modulation between monolayer MoS 2 channel and Au electrode is shown. It is found experimentally through in situ strain electrical and kelvin probe force microscope measurements that tensile strain lowers the contact energy barriers between MoS 2 and Au, in which the changes in the contact barriers is attributed to the strain-induced increase of the electron affinity in MoS 2 monolayer. Furthermore, the strain-induced barrier modulation is also shown to affect photoresponse behaviors in a MoS 2 flexible photodetectors through bending of energy bands that affect photogenerated carrier transport and electron-hole recombination. These findings present important pathway toward designing flexible devices based on 2D TMDCs.
“…It is important to note that the adherence of metal electrodes to PDMS substrate is usually poor [31]. Furthermore, among materials generally used in electronics devices, a thin metal layer is one of the weakest parts against mechanical stress and has a potential problem of cracking when stressed because of the degradation of its morphological and electrical properties during repeated mechanical excitation [32][33][34][35]. This could result in bad electrical charge transfer and increase the electrical losses, preventing the metal layer from being a functional bottom electrode.…”
Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.
“…Corresponding bending strains can be determined using the formulation provided in Figure S3, Supporting Information. [ 27 ] The measurements were carried out using an in‐house‐built apparatus. The fractional change in resistance ( R / R 0 ) was used as a measure of the printed resistor's stability when it is subjected to bending.…”
Malfunctions in printed circuit boards (PCBs) are often caused by damaged copper traces. Printing materials such as metal nanoparticles, conductive polymers, and graphene along with novel printing methods are being actively explored for repairing the conductive connections in PCBs. Because of its high‐resolution capability, direct writing of conductive traces gets significant attention, especially with the widespread use of flexible PCBs. Graphene is an ideal material for such applications due to its excellent electrical and mechanical properties. However, there have been limited reports on graphene‐based methods for the facile fabrication of conductive traces. A novel method of femtosecond laser direct writing of graphene traces by the photoreduction of graphene oxide (GO) to conductive reduced GO (rGO) for repair and modification of legacy PCBs is reported. A trace‐width resolution of 28.4 μm is achieved over a large patterning area of 100 mm × 100 mm. The rGO thickness is found to be tunable from 0.6 to 4.4 μm, while the sheet resistance is minimized to 100 Ω sq−1. The system capability is demonstrated by printing conductive traces on top of a flexible substrate to form a closed path for turning on a light‐emitting diode, as well as, by repairing a commercial PCB.
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