Bending Performance of Flexible Organic Thin-Film Transistors With/Without Encapsulation Layer

Oh, Jongsu; Kim, Jin-Ho; Lee, So Young; Kim, Min Su; Kim, Jae-Moon; Park, KeeChan; Kim, Yong−Sang

doi:10.1109/tdmr.2017.2780267

Cited by 18 publications

(9 citation statements)

References 16 publications

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“…Oh et al fabricated a PDMS encapsulated transistor, and the PDMS encapsulation layer was formed by spin-coating. This work also indicated that by adjusting the thickness of the encapsulation, a neutral axis position for the conductive layer can be established to maintain the flexibility of the transistor [32]. Khan et al deposited a thin layer of a fluoropolymer using spin-coating to encapsulate the inkjet printed flexible gold traces.…”

Section: Solution-processed Encapsulationmentioning

confidence: 98%

“…Some solutionprocessed encapsulation examples are listed in Table 1. Materials that are compatible with solution-processed encapsulation are fluid inks or pastes such as Ecoflex, SU-8, formulated polymer solutions (PDMS, PI, PVC, etc), dielectric paste [6,12,25,26,[30][31][32][33][34][35][36]. Ecoflex is a printable bioplastic with special properties such as flexibility, toughness and water resistance [37].…”

Section: Solution-processed Encapsulationmentioning

confidence: 99%

See 1 more Smart Citation

Approaches for Solution-Processed Encapsulation of Printed Medical Wearable Devices

Chen

Gengenbach

Koker

et al. 2020

Current Directions in Biomedical Engineering

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Wearable medical devices offer a great opportunity to monitor human vital signs to improve healthcare. The use of printing technologies is a promising approach to fabricate the wearables. An encapsulation must be applied to achieve longterm stability and reliability of the printed wearables. In this paper, we discuss the encapsulation requirements of printed wearable medical devices. Different encapsulation approaches are illustrated by means of various examples. Thereby, the focus lies upon solution-processed encapsulation, including the compatible materials and printing technologies.

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Section: Solution-processed Encapsulationmentioning

confidence: 98%

Section: Solution-processed Encapsulationmentioning

confidence: 99%

Approaches for Solution-Processed Encapsulation of Printed Medical Wearable Devices

Chen

Gengenbach

Koker

et al. 2020

Current Directions in Biomedical Engineering

View full text Add to dashboard Cite

show abstract

“…76,77) Furthermore, mechanical strain is determined by the film thickness of the substrate and the relative ratio of Young's modulus between the prepared films and substrate materials. 78) Therefore, the film thickness of the flexible substrate is one of the most important design parameters to guarantee the mechanical flexibility of fabricated devices and large-scale memory arrays, and hence, the choice of ultra-thin film type flexible substrates can effectively reduce the induced mechanical strain, as discussed in 3.2. From these viewpoints related to the mechanical flexibility, we have to finally pay attention to the electrodes including global interconnections and the oxide dielectric layers including the passivation and GI layers.…”

Section: Mechanical Flexibilitymentioning

confidence: 99%

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Yoon

Yang

Kim

et al. 2019

Jpn. J. Appl. Phys.

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We introduce mechanically flexible nonvolatile memory thin-film transistors (MTFTs) for future highly functional flexible and stretchable electronic devices and systems. The proposed memory devices are uniquely composed of oxide-semiconductor thin films and operated with charge-trap and detrap mechanisms for nonvolatile memory operations. Charge-trap-assisted MTFTs (CT-MTFTs) using In-Ga-Zn-O active and ZnO charge-trap layers are designed and fabricated on flexible poly(ethylene naphthalate) and colorless polyimide films prepared on carrier glass substrates. We describe the fabrication processes and evaluation methodologies for realizing flexible CT-MTFTs in a detailed way and discuss related technical issues. The device characteristics and memory performance of the fabricated flexible CT-MTFTs, including when the devices are mechanically strained, are extensively discussed. We also propose further improvements for remaining issues on device performance from the viewpoints of memory operations and mechanical flexibility. © 2019 The Japan Society of Applied Physics PI (CPI) film substrates in Chap. 3. Furthermore, the memory operation mechanisms based on the device physics including the material properties and considerations on the designed device structures will be examined. Finally, in Chap. 4,

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“…2) Moreover, the OS films can be deposited by using various low-temperature process techniques, intriguingly enabling the integration of high-performance TFTs in the back-end-of-line (BEOL) of IC chips and on glass or flexible substrates. To practically implement highperformance TFTs for flexible, foldable, wearable, and stretchable electronics on inexpensive and pliable plastic substrates such as polyethylene naphthalate, 3) polyethylene terephthalate, [4][5][6] and polydimethylsiloxane, [7][8][9] it is essential to have all the fabrication processes doable at temperatures lower than 200 °C. 10) Low-power TFTs are in strong demand due to limited battery capacities in realistic portable electronics.…”

Section: Introductionmentioning

confidence: 99%

A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs

Liu,

Lin,

Chen

et al. 2024

Jpn. J. Appl. Phys.

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We proposed a novel low-temperature (<110 oC) process scheme based on the film-profile engineering (FPE) technique for fabricating indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) with both bottom-gated (BG) and double-gated (DG) configurations. An organic photoresist (PR) suspended bridge is constructed to shadow the depositing species during the deposition processes of the bottom gate-oxide, channel, and source/drain metal films. An Al2O3 layer deposited at 110 °C using atomic-layer deposition (ALD) is employed as the bottom gate-oxide layer. Such a low-temperature process allows us to deposit the Al2O3 layer following the formation of the PR suspended bridge, preventing the formation of organic residues between the gate-oxide and channel layers. As a result, excellent device performance in terms of field-effect mobility of 12.1 cm²/V-s and subthreshold swing of 141 mV/dec is achieved. Our proposed low-temperature process scheme is readily applicable for fabricating DG TFTs which show substantial enhancements in driving currents.

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Bending Performance of Flexible Organic Thin-Film Transistors With/Without Encapsulation Layer

Cited by 18 publications

References 16 publications

Approaches for Solution-Processed Encapsulation of Printed Medical Wearable Devices

Approaches for Solution-Processed Encapsulation of Printed Medical Wearable Devices

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs

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