Beiträge zur systematischen Verwandtschaftslehre. 58. Beiträge zur Kenntnis der Verbindungen des Galliums und Indiums. VIII. Die Ammoniakate der Galliumhalogenide

Klemm, Wilhelm; Tilk, Woldemar; Jacobi, Helmut

doi:10.1002/zaac.19322070210

Cited by 22 publications

(2 citation statements)

References 11 publications

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“…8 Based on the strong Lewis acid character of Ga, Ga(NH 2 ) 3 would be expected to be polymeric and hence nonvolatile at 25°C. This latter suggestion was confirmed.…”

Section: )mentioning

confidence: 99%

New Gallium Precursors for the Formation of High Purity Gallium Arsenide by Metal Organic Vapor Phase Deposition.

Schram¹

1984

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“…8 Based on the strong Lewis acid character of Ga, Ga(NH 2 ) 3 would be expected to be polymeric and hence nonvolatile at 25°C. This latter suggestion was confirmed.…”

Section: )mentioning

confidence: 99%

New Gallium Precursors for the Formation of High Purity Gallium Arsenide by Metal Organic Vapor Phase Deposition.

Schram¹

1984

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“…Their compositions were determined by the weight change of gallium halide during the reaction with ammonia and titration. In the following year, Klemm et al12 derived the heats of formation of a number of ammoniates GaX 3 · n NH 3 ( n = 1–20 depending on the halide X) from measurements of decomposition pressures at various temperatures. Ammoniates with lower numbers of ammonia molecules per gallium atom, namely, GaF 3 NH 3 , GaF 3 (NH 3 ) 2 , [Ga(NH 3 ) 5 Cl]Cl 2 , and [GaBr 3 NH 3 ] were later synthesized at elevated temperatures from various starting materials and characterized with respect to crystal structure, spectroscopy, and thermal decomposition 13–15.…”

Section: Introductionmentioning

confidence: 99%

Intermediates in Ammonothermal GaN Crystal Growth under Ammonoacidic Conditions

et al. 2013

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Crystals of two new hexammoniates, namely, [Ga(NH3)6]I3·NH3 and [Ga(NH3)6]Br3·NH3, were grown from liquid ammonia solutions of GaI3 and GaBr3 in a wide temperature range. The known compound [Ga(NH3)5Cl]Cl2 and the new triammoniate of gallium fluoride Ga(NH3)3F3 were obtained ammonothermally during the synthesis of GaN from NH4Cl and NH4F, respectively. The compounds are characterized by crystallographic parameters derived from their X‐ray diffraction data. The crystal structures of all the ammoniates feature octahedrally coordinated Ga atoms in complex ions of the general form [Ga(NH3)6–nXn](3–n)+ (n = 0, 1, 2, 4; X = F, Cl, Br, I). The extensive N–H···X hydrogen bonding networks in these compounds are analyzed. The IR and Raman spectroscopy data for [Ga(NH3)6]X3·NH3 (X = Br, I) and Ga(NH3)2F3 are provided, and the IR spectrum of Ga(NH3)3F3 is compared with those published for the monoammoniate Ga(NH3)F3 and the diammoniate Ga(NH3)2F3. Finally, the thermal deamination features of [Ga(NH3)6]X3·NH3 (X = Br, I) and Ga(NH3)3F3 are also discussed.

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Gallium: Inorganic ChemistryBased in part on the article Gallium: Inorganic Chemistry by Andrew R. Barron which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Banger

Hepp

2005

Encyclopedia of Inorganic Chemistry

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An overview of the inorganic chemistry of gallium and its compounds is reported in detail with an attempt to bring up to date current studies in this field. In addition, the use of various Ga related alloys as either binary or ternary semiconducting material for bulk, thin film, and nanotechnology is reported in detail pertaining to their synthesis, properties, and application. The chemistry of Ga inorganic and coordination derivatives is also reviewed and discussed.

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Beiträge zur systematischen Verwandtschaftslehre. 58. Beiträge zur Kenntnis der Verbindungen des Galliums und Indiums. VIII. Die Ammoniakate der Galliumhalogenide

Abstract: 1. Es wurden die im Gleichgewicht beständigen Ammoniakate der Galliumhalogenide festgestellt und ihre Bildungswärmen ermittelt.

Cited by 22 publications

References 11 publications

New Gallium Precursors for the Formation of High Purity Gallium Arsenide by Metal Organic Vapor Phase Deposition.

New Gallium Precursors for the Formation of High Purity Gallium Arsenide by Metal Organic Vapor Phase Deposition.

Intermediates in Ammonothermal GaN Crystal Growth under Ammonoacidic Conditions

Gallium: Inorganic ChemistryBased in part on the article Gallium: Inorganic Chemistry by Andrew R. Barron which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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