Behaviour of a low-noise microwave f.e.t. at low temperature

Loriou, B.; Bellec, Matthieu; Rouzic, M. Le

doi:10.1049/el:19700566

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Cited by 8 publications

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Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies

Fendrich

Feng

1998

Applied Physics Letters

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Measurements of the noise parameters of a GaAs metal-semiconductor field effect transistor (MESFET) show the minimum noise figure decreases exponentially into the noise floor with decreasing temperature for most frequencies from 2 to 18 GHz and for most currents. The MESFET noise has a thermal activation energy of ∼55 meV which is almost half the value seen in a pseudomorphic high electron mobility field effect transistor (pHEMT). Unlike in the pHEMT, the high-temperature coefficient to the activated behavior for the MESFET is independent of current and frequency.

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