Behaviors of Fe and Ni at crystal defects in multi-crystalline silicon by intentional contamination and phosphorus gettering

Miyazaki, Naoto; Tsuchiya, Yoichi; Sameshima, Takashi; Tachibana, Takeshi; Kojima, Takuto; Ohshita, Yoshio; Arafune, Koji; Ogura, Atsushi

doi:10.1109/pvsc.2012.6317617

Cited by 2 publications

(5 citation statements)

References 16 publications

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“…D b peaks at 0.87 eV are considered to be related to oxygen precipitates. 6,7) Comparison of SA-GBs with the same angle showed that the spectra remained the same at the D a1 band shape before and after the Fe contamination. PL spectra in the energy region higher than 0.8 eV differ depending on the misorientation angle at SA-GBs.…”

Section: Resultsmentioning

confidence: 95%

“…1(a) and 1(b), respectively. D a1 peaks, which are attributable to secondary defects and/or impurities trapped by the strain field around the dislocations, 6,7) existed at approximately 0.78 eV. D b peaks at 0.87 eV are considered to be related to oxygen precipitates.…”

Section: Resultsmentioning

confidence: 99%

“…The PL spectrum at 0.87 eV is reported to be related to the oxygen precipitates. 6,7) Thus, the PL spectrum at the energy higher than 0.8 eV might originate from multiple components, such as the crystalline structure of SA-GBs and light-element impurities. The complex changes in the intensity ratio for the individual component might appear as a peak shift of the broad peak as a summation.…”

Section: Resultsmentioning

confidence: 99%

“…SA-GBs act as particularly strong recombination centers for minority carriers. [3][4][5][6][7][8][9] Room-temperature photoluminescence (PL) is a practical technique for detecting defects and impurities. [10][11][12][13] In previous studies, we reported the relationship between the electron-beam-induced current (EBIC) contrast and dislocation densities at SA-GBs.…”

Section: Introductionmentioning

confidence: 99%

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Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

Funakoshi

Ikeno

Tachibana

et al. 2014

Jpn. J. Appl. Phys.

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The photoluminescence properties of small-angle grain boundaries (SA-GBs) with various misorientation angles were evaluated before and after Fe contamination. Comparison of SA-GBs with the same misorientation angle showed that the Da1 band at 0.78 eV remain the same before and after the Fe contamination. At the SA-GBs with the misorientation angle of 5°, a strong emission existed at 0.87 eV, which has been reported as an oxygen-precipitation-related peak. The emission of this high-energy region became weaker and shifted toward lower energy for a smaller misorientation angle. The high-energy emission became weak after the Fe contamination. It is considered that the Fe contamination affected the PL spectra originating from oxygen precipitates.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

Funakoshi

Ikeno

Tachibana

et al. 2014

Jpn. J. Appl. Phys.

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“…It has been reported that the recombination activity is predominantly determined by the dislocation density at the grain boundary. [31][32][33] Since the small-angle grain boundary can be explained using a dislocation model, 34) it is considered that the recombination activity at the dislocation caused by sawing can be similarly explained. Dense dislocations are strongly electrically active.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of saw damage using diamond-coated wire in crystalline silicon solar cells by photoluminescence imaging

Kinoshita

Kojima

Suzuki

et al. 2018

Jpn. J. Appl. Phys.

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Si ingots were sliced using a diamond-coated wire, and saw damage was observed even after damage removal etching and texturization. Since invisible microscopic damage was observed only under uncontrolled slice conditions, such damage was identified as saw damage. The wafers with saw damage exhibited the degradation of solar cell conversion efficiency (approximately 1–2% absolute). The results of external quantum efficiency (EQE) measurements showed a slight deterioration of EQE in the short wavelength region. Current–voltage characteristic measurements showed similar results that agreed with the EQE measurement results. In addition, EQE mapping measurements were carried out at various irradiation wavelengths between 350 and 1150 nm. Areas with dark contrasts in EQE mapping correspond to saw damage. In the cells with a low conversion efficiency, both EQE mapping and PL images exhibited dark areas and lines. On the other hand, in the cells with a high conversion efficiency, a uniform distribution of saw damage was observed even with the saw damage in the PL images. We believe that sophisticated control to suppress saw damage during sawing is required to realize higher conversion efficiency solar cells in the future.

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Behaviors of Fe and Ni at crystal defects in multi-crystalline silicon by intentional contamination and phosphorus gettering

Cited by 2 publications

References 16 publications

Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

Evaluation of saw damage using diamond-coated wire in crystalline silicon solar cells by photoluminescence imaging

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