Behavioral modeling of VCSELs for high-speed optical interconnects

Szczerba, Krzysztof; Kocot, Chris

doi:10.1117/12.2295835

Cited by 4 publications

(3 citation statements)

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“…Mena [60] This approach enables efficient and fast co-simulation with driving electronics and can use a physical rate equation-based description of the VCSEL combined with essential input impedance circuit elements. Circuit-level VCSEL models, such as [60]- [69], are often hybrid models that employ rate equations, and therefore fall in-between a purely physical and empirical description. While physical models might provide critical feedback to device designers, it is harder to fit simulations to measurements and extract physical parameters.…”

Section: A Circuit Modelsmentioning

confidence: 99%

“…1) The input impedance is typically modeled by including the VCSEL pad, mesa, and active area. Impedance modeling of the active layer typically includes either only RC-elements [61], [62], [64] or RC-elements together with voltage sources [60], [65], [66], [69], often in combination with diodes. At the input of this circuit, the current I and the voltage U represent the VCSEL drive current (biased around I b ) and VCSEL voltage drop, respectively.…”

Section: A Circuit Modelsmentioning

confidence: 99%

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End-to-End Learning for VCSEL-Based Optical Interconnects: State-of-the-Art, Challenges, and Opportunities

Srinivasan

Song

Grabowski

et al. 2023

J. Lightwave Technol.

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Section: A Circuit Modelsmentioning

confidence: 99%

Section: A Circuit Modelsmentioning

confidence: 99%

End-to-End Learning for VCSEL-Based Optical Interconnects: State-of-the-Art, Challenges, and Opportunities

Srinivasan

Song

Grabowski

et al. 2023

J. Lightwave Technol.

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“…This work is an extension of [4] and examples of recent similar works on this topic can be found in [5], [6], [7], [8]. This work together with [5] include the additional use of two sub-circuits to keep track of the free carriers in the barrier regions and in the QWs.…”

Section: Introductionmentioning

confidence: 97%

Large-Signal Equivalent Circuit for Datacom VCSELs

Grabowski

Gustavsson

et al. 2021

J. Lightwave Technol.

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Increasing the baud rate in optical interconnects (OIs) will require the use of more sophisticated driver and receiver electronics. This will help overcome the stagnated bandwidth of the Vertical-Cavity Surface-Emitting Laser (VCSEL) and the pin-photodetector. Next generation OIs operating at single lane rates of 50+ Gbaud will therefore require careful co-optimization of the electronics and the optoelectronics. To facilitate this work there is a need of an accurate equivalent circuit for the optoelectronic components, functioning over a broad drive current and ambient temperature range. The VCSEL is the most important and complex to model due to its nonlinear behavior and strongly varying characteristics with drive current and ambient temperature. For this purpose, a large-signal equivalent circuit dedicated for high-speed datacom VCSELs has been developed and is presented here. The distributed electrical parasitics in the device layout are carefully considered, the intrinsic speed limitation from carrier transport effects in the Separate-Confinement-Heterostructure (SCH) and the carrierphoton interaction in the Quantum Wells (QWs) are included, and self-heating effects in the device are monitored. The circuit is purposely based on physical instead of empirical models so that it can provide usable feedback to VCSEL designers. For circuit demonstration, it is implemented in Keysight's Advanced Design System (ADS) software and thereafter applied to replicate the performance of a state-of-the-art 28-GHz-bandwidth VCSEL at different temperatures and drive currents. Comparison is made between simulated and measured steady-state characteristics, small-signal behavior, and large-signal response under 28 Gbaud On-Off-Keying (OOK) and Pulse-Amplitude-Modulation 4 (PAM4) modulation, showing good agreement.

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