Behavior of various silicon Schottky barrier diodes under heat treatment

Characterization of W-N Alloys Formed By Sputter Deposition

“…Elemental W [5] as well as W-based polycrystalline [6] or amorphous [7] alloys have been applied with considerable success as diffusion barriers; nitrogen increases the stability of refractory transition-metal based diffusion barriers, probably through the formation of stable metal-nitrides or the decoration of grain boundaries [8,9].…”

Palladium Silicide Ohmic Contacts to Shallow Junctions in Silicon

“…As a consequence of thick molybdenum sill- cide formation, the contact resistance and junction leakage current are expected to rise. These results indicate that palladium silicide contacts with molybdenum metallization for the interconnections should show stable dhvlce characteristics up to a maximum processing temperature of 475~ This is a considerable improvement in high-temperature capability for the palladium silicide/ molybdenum metallization system in comparison to the palladium silicide/aluminum metallization system (7,8).…”

“…Palladium silicide contacts to a relatively large area in silicon are reported in a number of publications (3)(4)(5)(6); however, only limited information is available for small area (~ 1 • 1 ~m) devices of interest to VLSI. Others have studied palladium silicide contacts covered with aluminum metallization, and they have found that the characteristics of Schottky diodes change when annealed above 300~ (7,8). Therefore, the objectives of this investigation were to determine the contact resistance of palladium silicide to small areas in silicon and to determine their thermal stability when molybdenum was used as a substitute for aluminum for first-level metal interconnections in a multilevel metallization scheme for VLSI technology.…”