Behavior of types A and B hole traps in n-type GaAs during long-period operation

Zhou, Jicheng; Qianbao, Zhan; Fu, Zheng‐Wen; Lü, Dongliang; Guan, Limin; Chen, Huangqi

doi:10.1016/0038-1101(92)90167-b

Cited by 3 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As in [9], we can probably associate the complex AsG,V,, with both A and B1 traps and this assignment is consistent with our conclusions derived from the trap density measurements.…”

Section: Discussionsupporting

confidence: 91%

“…Thus, our results indicate that VGa is a component of the hole traps observed in LPE GaAs. This means, the origin of the traps cannot be simply linked to GaA,, but they are more likely to have a complex structure in accordance with [9] and [lo].…”

Section: Discussionmentioning

confidence: 89%

“…Our results show that the origin of the level B2 is such that its density is lowered upon Sb doping while a new electron trap C with an activation energy of 0.75 eV is produced. Following [9], if we assign the defect complex GaA,V,, to the B2 trap then its occurrence may be suppressed in presence of Sb atoms which also compete for the vacant As sites.…”

Section: Discussionmentioning

confidence: 99%

“…In most studies, the traps are found in nearly equal concentrations and hence they are usually linked to a common source, a native defect [4, 6, 71 or more specifically, to a GaAs antisite defect [3]. Recent studies by Zhou et al [9], however, reveal that under certain circumstances, trap A and trap B may have unequal concentrations. They explained this behavior on the basis of an earlier model, developed by Zou [lo], where two kinds of vacancy-antisite complexes were assigned to A and B levels.…”

Section: Introductionmentioning

confidence: 97%

See 3 more Smart Citations

Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony

Mallik

Dhar

1994

Physica Status Solidi (b)

View full text Add to dashboard Cite

Photocapacitance measurements in the photon energy range of 0.64 to 1.27 eV are done on GaAs layers grown by liquid phase epitaxy (LPE) and doped with varying amounts of indium (In) and antimony (Sb). Two hole traps with optical ionization energies of 0.65 and 0.79 eV are revealed in thc material which are assumed to be two levels associated with the hole trap B reported in the literature. In addition, the hole trap A, usually found in LPE GaAs is also detected here by optical deep level transient spectroscopy (ODLTS) technique. The results of trap density measurements, as functions of isoelectronic doping Concentration, indicate that V, , is an active constituent of the hole traps in LPE GaAs. The concentration of the 0.79 eV trap is found to be reduced in the material with high concentration of Sb. The analysis of photocapitance data using the existing theoretical models indicates the presence of an electron trap with activation energy of 0.75 eV in the heavily Sb-doped material. This trap may be identified with the second charge state of the Sbca electron trap, obtained previously in bulk and metalorganic vapor phase epitaxial GaAs doped with Sb. The sharp reduction of the 0.79 eV hole trap density in Sb-doped materials is explained by assuming the complex Ga,,V&, as its source.

show abstract

“…As in [9], we can probably associate the complex AsG,V,, with both A and B1 traps and this assignment is consistent with our conclusions derived from the trap density measurements.…”

Section: Discussionsupporting

confidence: 91%

Section: Discussionmentioning

confidence: 89%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony

Mallik

Dhar

1994

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing

Herrick

Petroff

1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

A photoluminescence and photocapacitance study of GaAs:In and GaAs:Sb layers grown by liquid-phase epitaxy

Mallik

Dhar

Sinha

1994

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Results of Hall, photoluminescence and photocapacitance measurements performed on GaAs layers grown by liquid-phase epitaxy (LPE) and doped with various amounts of indium (In) and antimony (Sb) are presented. Hall measurements show that such doping marginally enhances the mobility in a certain optimum doping range. Near-band-edge photoluminescence spectra indicate the presence of C, and SiAs as major acceptor impurities in lightly In-doped material. The latter impurity is not detected in heavily In-doped GaAs layers or in Sb-doped layers with either low and high doping density. Photocapacitance measurements reveal the presence of hole traps A and B, reported previously in undoped LPE GaAs. Indium doping reduces the total density of inese traps. Furiinermore. Sb doping induces a very sharp faii in the density oi trap B. The results indicate that the hole trap B may be related to a GaAr antisite defect.

show abstract

Behavior of types A and B hole traps in n-type GaAs during long-period operation

Cited by 3 publications

References 6 publications

Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony

Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony

Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing

A photoluminescence and photocapacitance study of GaAs:In and GaAs:Sb layers grown by liquid-phase epitaxy

Contact Info

Product

Resources

About