Behavior of Carbon-Containing Impurities in the Process of Plasma-Chemical Distillation of Sulfur

Enhancement of IR transparency of arsenic sulfide materials via plasma-chemical conversion of the initial arsenic monosulfide in low-temperature RF plasma

“…The lines of As 2 , As, S 2 , and S fragments are present in the emission spectra. However, it should be noted that for sulfur it is the S 2 particle that is the most preferred form of existence in plasma, see [6,26]. It is this particle, in our opinion, that plays a key role in the process of anionic polymerization.…”

“…The mass spectrum of the As 4 S 4 treated by plasma with a high energy yield is presented in figure 6 (6). In comparison with 6(2), the spectrum includes the lines referring to the AsS and As 2 units, but also the spectrum engages the intensive lines of the massive fragments As 4 S 4 , and As 4 S 5 that form the main structure of the As-S PECVD films.…”

“…By the 2000s it had become obvious that the utilization area of chalcogenide glasses could not be extended only through progress in the technologies of their preparation in a high-pure state [3] and, associated with this, efforts to reach theoretical values of optical losses in the IR region [4]. The existing methods of deep purification appeared to be exhausted, especially in the field of reducing the content of nanoscale hetero inclusions [5,6]. A bit later, there were attempts to expand the functionality of chalcogenide materials by introducing rare-earth ions into the glass net, leading to the luminescence effect by analogy with oxide glasses [7,8].…”

Study of the Conversion of Carbon-containing and Organochlorine Impurities in the Process of Hydrogen Reduction of Silicon Tetrachloride by RF (40.68 MHz) Arc Discharge.

“…In [2] a method of plasmachemical synthesis of trichlorosilane under conditions of RF (40.68 MHz) arc discharge, providing a high (up to 60%) yield of trichlorosilane with low energy consumption, was proposed. It is known that, along with the main synthesis reaction, the reactions involving micro-impurities occur in the volume of gas discharge which leads to the change in their chemical form and concentration [3][4][5][6]. The content of impurities in silicon tetrachloride, that are formed in the process of obtaining polycrystalline silicon and silane, is at the purity level of the original trichlorosilane.…”