Behavior of alumina barrier layer in the supporting electrolytes for deposition of nanowired materials

Jagminas, Arūnas; Češūnienė, A.; Vrublevsky, Igor; Jasulaitienė, Vitalija; Ragalevičius, Rimas

doi:10.1016/j.electacta.2010.01.058

Cited by 7 publications

(8 citation statements)

References 40 publications

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“…Large number of experimental facts proves this point of view. Anodic alumina films formed in oxalic acid contain a huge number of oxalate species incorporated into the bulk of films that can influence its properties [7][8][9]. The most intensive luminescence is observed in anodic alumina films formed in organic acids [2] which is contrary to the suggestion that the photoluminescence may be caused by the lattice defects (oxygen vacancies).…”

Section: Introductioncontrasting

confidence: 58%

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Vrublevsky¹,

Jagminas²,

Hemeltjen³

et al. 2008

Applied Surface Science

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Section: Introductioncontrasting

confidence: 58%

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Vrublevsky¹,

Jagminas²,

Hemeltjen³

et al. 2008

Applied Surface Science

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“…This value is in good agreement with that found in EIS measurements but smaller than that cited by other authors (1 nm/V, 1.4 nm/V). 6,38,41 This may be due to a little alteration of the barrier layer thickness during EIS measurements. Indeed, several studies were reported on the barrier layer thinning during AC treatment and pulse electrodeposition.…”

Section: Scmentioning

confidence: 99%

“…The changes were related with the transport of protons through the barrier layer, discharge at the metal/oxide interface and hydrogenation of alumina material by hydrogen atoms in an upward way. 6 Apart from their microstructural characteristics, the physicochemical properties of the porous oxide films on alumina have also been a subject of intense interest and continue to be a subject of numerous investigations. The current understanding of porous oxide layer results from the use of various in situ and ex situ techniques.…”

mentioning

confidence: 99%

Electrochemical Impedance Investigation of Anodic Alumina Barrier Layer

Benfedda

Hamadou

Benbrahim

et al. 2012

J. Electrochem. Soc.

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In the present work, well ordered nanoporous anodic aluminum oxides (AAO) have been prepared on aluminum by a two step anodization process in 0.5 M oxalic acid at various potentials. We report the properties and semiconducting characteristics of the porous alumina barrier layers by electrochemical impedance spectroscopy analysis (EIS). EIS is considered to be a highly sensitive and non-destructive technique that allows determining barrier oxide layer characteristics. Aluminum oxide barrier is considered as a semiconductor which acts as a p-n heterojunction at anodizing voltages up to 20 V. The alumina barrier layer structure consists of a hole transport inner layer and an electron transport outer layer. Doping densities, flatband potential as well as space charge layer thickness are discussed in correlation with anodizing potential. Barrier layer thicknesses measurements obtained by EIS were compared with those obtained after EIS measurements by direct scanning electron microscopy observations.

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“…Surface engineering of aluminum and porous anodic alumina (PAA) films grown by anodic oxidation (anodizing) of aluminum have been of increasing interest for lithography‐free templating of metals, dielectrics, and semiconductors . PAA‐assisted anodization of certain valve metals sputtered on substrates, including tungsten, has proven its potential as a reproducible method for electrochemically forming self‐organized vertically aligned spatially separated 1D nanostructures (nanocolumns, rods, or tubes), being nearly ideally electrically and mechanically bonded at their bottoms either to the substrate metal or to a continuous solid layer of similar metal oxide that grows at the columns/substrate‐metal interface .…”

Section: Introductionmentioning

confidence: 99%

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Bendová

Hubálek

Mozalev

2016

Adv Materials Inter

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size effect. [1][2][3] Eventual functionalization of WO x nanostructures through modifying the surface and interfacial properties by combining, doping, or decorating the pure oxide with other nanomaterials creates additional metal/semiconductor or semiconductor/semiconductor interfaces and grain boundaries capable of further infl uencing the sensing, electrical, optical, and opto-electronic properties or even introducing novel unique functionalities. [4][5][6] Contrarily to WO x nanostructures with no directional orientation of its morphological units, like disordered 1D nanowires or nanorods grown by vapor-and liquid-phase methods, [ 1,7 ] oriented 1D WO x nanostructures, self-organized and upright-standing on a conducting substrate, without mutually intersecting with each other are expected to bring more advantages for practical applications in nanoscale electrochromic, [ 8,9 ] fi eldemission, [ 10 ] gas-sensing, [ 11 ] and photonic devices. Moreover, substrate-supported 1D nanostructures assembled in an array would enable the use of their integral properties, especially electrical, optical, or mechanical in contrast with the formation and application of single nanowires relying on their individual characteristics. [ 12,13 ] Synthesis of WO x nanostructures regularly aligned on substrates has been an active and competitive area of nanoscience and nanotechnology as the arrays of 1D structures often suffer from mechanical weakness and randomly dispersed physical contacts between neighboring units, limiting their performance in a device. Besides, creating welldefi ned nanoscale metal/semiconductor electrical and thermal interfaces and boundaries by contacting the tops of 1D nanostructures assembled in an array in a reliable and reproducible manner to benefi t from the characteristics measured along the nanostructures and across relevant interfaces has been a challenge. [8][9][10][11][14][15][16][17] Surface engineering of aluminum [ 18 ] and porous anodic alumina (PAA) fi lms grown by anodic oxidation (anodizing) of aluminum have been of increasing interest for lithography-free templating of metals, dielectrics, and semiconductors. [19][20][21][22] PAA-assisted anodization [ 23 ] of certain valve metals sputtered on substrates, including tungsten, [24][25][26] has proven its potential as a reproducible method for electrochemically forming self-organized vertically aligned spatially separated 1D nanostructures (nanocolumns, rods, or tubes), being nearly ideally electrically and mechanically bonded at their bottoms either to the substrate metal [ 26 ] or to a continuous solid layer of similar metal oxide that grows at the columns/substrate-metal interface. [ 24,25 ] On the way An array of semiconducting tungsten-oxide (WO x ) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modifi ed by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnec...

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Behavior of alumina barrier layer in the supporting electrolytes for deposition of nanowired materials

Cited by 7 publications

References 40 publications

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Electrochemical Impedance Investigation of Anodic Alumina Barrier Layer

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

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Behavior of alumina barrier layer in the supporting electrolytes for deposition of nanowired materials

Cited by 7 publications

References 40 publications

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Electrochemical Impedance Investigation of Anodic Alumina Barrier Layer

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

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Product

Resources

About

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers