Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

Reshchikov, M. A.; Yi, Gyu Chul; Wessels, Bruce W.

doi:10.1103/physrevb.59.13176

Cited by 234 publications

(223 citation statements)

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“…This energy is in fair agreement with the level predicted for C Ga , which is the most likely candidate for the BLrelated deep donor as shown by Seager et al 3 Nitrogen vacancy-related defects could possibly be considered as alternative candidates for the BL-related donors, as they have been proposed to explain the "blue" PL band in heavily-Mg doped GaN [17][18][19] , and the experimentally determined optical ionization energy is close to 400 meV. However incorporation of V N defects is energetically unfavorable except in p-type conditions 20 ; significant concentrations would certainly not be expected in n-type conducting layers exhibiting BL (Fig.…”

Section: B Defect Model For the Carbon-related Blue Luminescencesupporting

confidence: 72%

“…The "blue" band observed in nominally undoped semi-insulating MOVPE GaN and intentionally C-doped GaN can safely be attributed to carbon, but caution should be exercised when interpreting the "blue" luminescence in other types of GaN samples. The carbon-related band can be clearly distinguished from other types of "blue" luminescence [17][18][19][23][24][25] by its different behavior in variable temperature and variable excitation density measurements. …”

Section: Discussionmentioning

confidence: 99%

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Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C Ga -C N deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm 2 ) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

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Section: B Defect Model For the Carbon-related Blue Luminescencesupporting

confidence: 72%

Section: Discussionmentioning

confidence: 99%

Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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“…Such PPC behavior has been observed in many III-V and II-VI semiconductor thin films and heterostructures. [19][20][21][22][23][24][25][26]28,[30][31][32][38][39][40][41] The origin of the PPC can be explained by the fact that the photoexcited carriers are trapped and spatially separated by local potential fluctuations, which then suppresses the recombination of carriers. The Al content affects the PPC decay rate.…”

Section: Resultsmentioning

confidence: 99%

“…21,30 In the GaN and Al x Ga 1−x N epilayers, this was similarly ascribed to defect complexes such as gallium vacancies, nitrogen antisites, deep-level impurities, and interacting defect complexes. 19,20,28,29,[31][32][33][34] In the literature, several studies can be found about PPC experiments on Al x Ga 1−x N / GaN heterostructures. [22][23][24][25] In those studies, the persistent increase in the carrier concentration was explained by the transfer of photoexcited electrons from the deep-level impurities in the Al x Ga 1−x N layers.…”

Section: Introductionmentioning

confidence: 99%

“…16͒ and III-V ͑Refs. 17 and 18͒ semiconductors, including the p-and n-type GaN epilayers, 19 Si or Se doped n-type GaN, 2,20 or Mg doped GaN, 20,21 AlGaN/GaN heterostructures, [22][23][24][25] and AlGaN epilayers. 25,26 Other related studies are rather useful for understanding the metastable properties of defects, the mechanisms for carrier storage and relaxation, and the transport properties in a disordered system.…”

Section: Introductionmentioning

confidence: 99%

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The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

Arslan

Bütün

Li̇şesi̇vdi̇n

et al. 2008

Journal of Applied Physics

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In the present study, we reported the results of the investigation of electrical and optical measurements in Al x Ga 1−x N / GaN heterostructures ͑x = 0.20͒ that were grown by way of metal-organic chemical vapor deposition on sapphire and SiC substrates with the same buffer structures and similar conditions. We investigated the substrate material effects on the electrical and optical properties of Al 0.20 Ga 0.80 N / GaN heterostructures. The related electrical and optical properties of Al x Ga 1−x N / GaN heterostructures were investigated by variable-temperature Hall effect measurements, photoluminescence ͑PL͒, photocurrent, and persistent photoconductivity ͑PPC͒ that in turn illuminated the samples with a blue ͑ = 470 nm͒ light-emitting diode ͑LED͒ and thereby induced a persistent increase in the carrier density and two-dimensional electron gas ͑2DEG͒ electron mobility. In sample A ͑Al 0.20 Ga 0.80 N / GaN/ sapphire͒, the carrier density increased from 7.59ϫ 10 12 to 9.9ϫ 10 12 cm −2 via illumination at 30 K. On the other hand, in sample B ͑Al 0.20 Ga 0.80 N / GaN/ SiC͒, the increments in the carrier density were larger than those in sample A, in which it increased from 7.62ϫ 10 12 to 1.23ϫ 10 13 cm −2 at the same temperature. The 2DEG mobility increased from 1.22ϫ 10 4 to 1.37ϫ 10 4 cm −2 / V s for samples A and B, in which 2DEG mobility increments occurred from 3.83ϫ 10 3 to 5.47ϫ 10 3 cm −2 / V s at 30 K. The PL results show that the samples possessed a strong near-band-edge exciton luminescence line at around 3.44 and 3.43 eV for samples A and B, respectively. The samples showed a broad yellow band spreading from 1.80 to 2.60 eV with a peak maximum at 2.25 eV with a ratio of a near-band-edge excitation peak intensity up to a deep-level emission peak intensity ratio that were equal to 3 and 1.8 for samples A and B, respectively. Both of the samples that were illuminated with three different energy photon PPC decay behaviors can be well described by a stretched-exponential function and relaxation time constant as well as a decay exponent ␤ that changes with the substrate type. The energy barrier for the capture of electrons in the 2DEG channel via the deep-level impurities ͑DX-like centers͒ in AlGaN for the Al 0.20 Ga 0.80 N / GaN/sapphire and Al 0.20 Ga 0.80 N / GaN/ SiC heterojunction samples are 343 and 228 meV, respectively. The activation energy for the thermal capture of an electron by the defects ⌬E changed with the substrate materials. Our results show that the substrate material strongly affects the electrical and optical properties of Al 0.20 Ga 0.80 N/GaN heterostructures. These results can be explained with the differing degrees of the lattice mismatch between the grown layers and substrates.

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Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO‐Based Hybrid Devices

Shimada

Morkoç̌

2011

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

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Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

Cited by 234 publications

References 22 publications

Analysis of the carbon-related “blue” luminescence in GaN

Analysis of the carbon-related “blue” luminescence in GaN

The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO‐Based Hybrid Devices

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