2006
DOI: 10.1109/ias.2006.256764
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Behavior and Loss Modeling of a Three-Phase Resonant Pole Inverter Operating with 120° Double FlatTop Modulation

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Cited by 13 publications
(1 citation statement)
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“…To this end, the switching energy dissipation E sw for each hard switching transition is approximated as a linear function of the commutation current I sw as (11) Accordingly, the switching power dissipation for a switching frequency f s is (12) The parameters k 0 and k 1 depend on the switched voltage U sw . Namely the parameter k 0 represents the constant part of the switching losses and is calculated in literature [21] (assuming unipolar power semiconductors) as (13) where Q oss is the electric charge stored in the non-linear output parasitic capacitance C oss of the MOSFET (14) For the case at hand, the parameter k 1 (U sw ) depends on the semiconductor technology and the gate driver configuration [22], [23]. Since the DC link voltage does not drastically change for the different modulation strategies as shown in (10), it can be assumed for a first step worst case consideration that the parameters k 0 and k 1 are the same regardless of the modulation strategy.…”
Section: B Semiconductor Switching Lossesmentioning
confidence: 99%
“…To this end, the switching energy dissipation E sw for each hard switching transition is approximated as a linear function of the commutation current I sw as (11) Accordingly, the switching power dissipation for a switching frequency f s is (12) The parameters k 0 and k 1 depend on the switched voltage U sw . Namely the parameter k 0 represents the constant part of the switching losses and is calculated in literature [21] (assuming unipolar power semiconductors) as (13) where Q oss is the electric charge stored in the non-linear output parasitic capacitance C oss of the MOSFET (14) For the case at hand, the parameter k 1 (U sw ) depends on the semiconductor technology and the gate driver configuration [22], [23]. Since the DC link voltage does not drastically change for the different modulation strategies as shown in (10), it can be assumed for a first step worst case consideration that the parameters k 0 and k 1 are the same regardless of the modulation strategy.…”
Section: B Semiconductor Switching Lossesmentioning
confidence: 99%