Beckett's Play : The Circular Line of Existence

Avigal, Shoshana

doi:10.1353/mdr.1975.0014

Cited by 1 publication

(2 citation statements)

References 3 publications

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“…Borophosphosilicate glasses exhibit properties satisfying these requirements. The reaction of boron with water causes the formation of boric acid crystals introducing local stresses (5). Boron plays a principal role in the lowering of glass viscosity, while the presence of phosphorus enhances the flow temperature lowering and introduces the internal gettering mechanism for mobile ions.…”

Section: Suppression Of Water Absorption In Borophosphosilicate Glassmentioning

confidence: 99%

“…These films can be deposited using organic or inorganic sources at relatively low temperatures and then annealed at higher temperatures so that steps in the dielectric layer are smoothed to aid conformal step coverage (1)(2)(3). Phosphoric acid is formed as a result of interactions between water and phosphorus which can result in metal line corrosion and local hot spots (5,6). It has been demonstrated that an increase of boron concentration by 1 weight percent (w/o) lowers the flow temperature by approximately 40-90~ for boron concentrations between 1 and 5 w/o (4,5).…”

Section: Suppression Of Water Absorption In Borophosphosilicate Glassmentioning

confidence: 99%

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Suppression of Water Absorption in Borophosphosilicate Glass Thin Layers with High Boron Concentration

Nauka

Liu

1991

J. Electrochem. Soc.

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A method for encapsulating a borophosphosilicate glass (BPSG) layer on a silicon substrate is demonstrated. The deposition of BPSG film using low-pressure chemical vapor deposition on silicon wafers is immediately followed by a thin, undoped silicon oxide layer deposition. The sequential deposition in the same reactor tube eliminates exposure of the BPSG film to the ambient air. The capping oxide suppresses water absorption in the underlying BPSG glass layer, thereby allowing more than 5 weight percent of boron to be incorporated into the BPSG film. The obtained layers are chemically stable and satisfy requirements for the low thermal budget interlevel dielectric.High-density, modern integrated circuits require superior quality interlevel dielectric which assures the continuity of metal lines over steps, and that which can be obtained at low temperatures. Borophosphosilicate glasses exhibit properties satisfying these requirements. These films can be deposited using organic or inorganic sources at relatively low temperatures and then annealed at higher temperatures so that steps in the dielectric layer are smoothed to aid conformal step coverage (1-3). Boron plays a principal role in the lowering of glass viscosity, while the presence of phosphorus enhances the flow temperature lowering and introduces the internal gettering mechanism for mobile ions. It has been demonstrated that an increase of boron concentration by 1 weight percent (w/o) lowers the flow temperature by approximately 40-90~ for boron concentrations between 1 and 5 w/o (4, 5). BPSG layers used in conventional very large scale of integration (VLSI) processes contain up to 5 w/o phosphorus and up to 5 w/o boron and can be flowed at temperatures as low as 800-900~ Postdeposition annealing at temperatures 50-150~ below the flow point is commonly employed to densify the film and gain an additional decrease in the flow temperature. Even lower flow temperatures and more aggressive step coverage will be required by future manufacturing processes. These requirements may be met by a further increase in boron concentration in the BPSG layer. However, boron and phosphorus in BPSG tend to react with water in the ambient air. This absorption process is concentration dependent for both dopants. The reaction of boron with water causes the formation of boric acid crystals introducing local stresses (5). Phosphoric acid is formed as a result of interactions between water and phosphorus which can result in metal line corrosion and local hot spots (5, 6). This report describes a silicon oxide capping process which enables the formation of stable BPSG layers with boron contents up to 10 w/o. It is shown that the thin silicon oxide cap prevents the diffusion of water into the BPSG film and thus enables a 100-200~ lower flow temperature to be employed in processing. ExperimentalThe present studies were conducted using p-type, lightly doped (dopant concentration less then 10 I5 cm -3) Si wafers. Dielectric layers were deposited in a commercial lowpressure chemical vapor ...

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Section: Suppression Of Water Absorption In Borophosphosilicate Glassmentioning

confidence: 99%

Section: Suppression Of Water Absorption In Borophosphosilicate Glassmentioning

confidence: 99%

Suppression of Water Absorption in Borophosphosilicate Glass Thin Layers with High Boron Concentration

Nauka

Liu

1991

J. Electrochem. Soc.

View full text Add to dashboard Cite

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Beckett's Play : The Circular Line of Existence

Cited by 1 publication

References 3 publications

Suppression of Water Absorption in Borophosphosilicate Glass Thin Layers with High Boron Concentration

Suppression of Water Absorption in Borophosphosilicate Glass Thin Layers with High Boron Concentration

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