2012
DOI: 10.1587/transele.e95.c.770
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Beating Analysis of Shubnikov de Haas Oscillation in In<sub>0.53</sub>Ga<sub>0.47</sub>As Double Quantum Well toward Spin Filter Applications

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Cited by 2 publications
(5 citation statements)
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References 9 publications
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“…6(b) and S2 in the Supplemental Material [36]] and the mobility μ value of the pristine bulk 2DES, respectively. We note that ex ≈ 0.9 μm in the chaos+impurity model is translated to μ ≈ 4 m 2 /Vs of the bulk mobility, which qualitatively agrees with μ ≈ 7.6 m 2 /V s of the pristine bulk 2DES obtained in separate experiments [16,34,35].…”
Section: B Extraction Of Parameters By "Chaos+impurity" Modelsupporting
confidence: 87%
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“…6(b) and S2 in the Supplemental Material [36]] and the mobility μ value of the pristine bulk 2DES, respectively. We note that ex ≈ 0.9 μm in the chaos+impurity model is translated to μ ≈ 4 m 2 /Vs of the bulk mobility, which qualitatively agrees with μ ≈ 7.6 m 2 /V s of the pristine bulk 2DES obtained in separate experiments [16,34,35].…”
Section: B Extraction Of Parameters By "Chaos+impurity" Modelsupporting
confidence: 87%
“…To answer these questions, we first refitted the data at V g = 0.85 V (k α = 0 rad/μm) using only k c and L φ as free fitting parameters in the magnetic field range |B| 0.32 mT, but now assuming ex = 1 μm instead of 10 μm as used in the chaos only model. The primary purpose of this first procedure is to obtain a reasonable value of k c , where ex = 1 μm was chosen rather arbitrarily from the bulk transport information (0.1 μm 10 μm) [16,34,35]. The extracted k c value was almost unaffected by small variations of ex around 1 μm, which justifies our rather ad hoc approach chosen here.…”
Section: B Extraction Of Parameters By "Chaos+impurity" Modelmentioning
confidence: 97%
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“…The active part of the device consists of a (001) InP lattice-matched In 0.53 Ga 0.47 As=In 0.52 Al 0.48 As DQW [24] with length L in the x direction. Nonmagnetic source and drain electrodes are attached to QW1 after etching away the above layers at both the left and right ends.…”
Section: Device Descriptionmentioning
confidence: 99%
“…In this paper, we utilize the interband Rashba effect in symmetric double quantum wells (DQWs) [14,[19][20][21][22][23] to generate a bulk spin polarization nonmagnetically, adopting In 0.53 Ga 0.47 As=In 0.52 Al 0.48 As DQWs [24] as a specific example. The interband Rashba effect manifests itself in the off-diagonal matrix element in the 2 × 2 quantum well (QW) space using the bonding and antibonding basis [19,20], which connects subbands with distinct parities and hence operates without the usual Rashba coupling [25][26][27].…”
Section: Introductionmentioning
confidence: 99%