Beam-produced plasma generated by the pulsed large-radius electron beam in the forevacuum pressure range

Abstract

The research of plasma produced by a pulsed low-energy large-radius electron beam generated by the plasma-cathode electron source in the forevacuum pressure range 4-13 Pa is presented. The beam-produced plasma has been generated in nitrogen by the electron beam with energy of 8 keV and pulse duration of 1.5 ms. The emission spectrum analysis and probe measurements have been used to investigate plasma parameters. Density of beam-produced plasma increases linearly with increasing electron beam current. The probe measurements have demonstrated almost linear dependence of plasma density on gas pressure in the pressure range 4-13 Pa, while intensities of spectral lines came from exited plasma ions are linear dependent on beam current only in pressure range 6-13 Pa. These spectral lines have low intensities at gas pressure below 6 Pa.

Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range

“…As the target potential increases, the delay time t d is shorter for greater plasma densities due to more effective compensation of target charging by increasingly dense ion flux. Figure 8(b) shows that the delay time t d rapidly increases for low plasma density, which corresponds to low operating gas pressure p. For a comparison with experiment, we make use of the almost-linear relationship between normalized plasma density n i /I e and gas pressure p, as shown previously [31]: One can see from figure 6 that the calculated delay times t d are in fair agreement with the experimental data. However, the calculated dependencies obtained in the approximation of a fixed target potential φ t vary with gas pressure more smoothly than the experimental data.…”

Beam–Plasma Discharge in Space and in a Lab

“…A similar installation is described in [60][61][62][63][64]. Figure 5 shows a general diagram of installations of [57][58][59][60][61][62][63][64]. Their electrical parameters are the same: U b = 1-3 kV, I b = 100-500 mA (current density 1-5 mA/cm 2 ).…”

“…This set is used for modification of surfaces of ceramics and glasses and for sintering composites, so it is not an installation for nanoelectronics. A description of the technological applications of installations of the type described in [60] can be found in [61][62][63][64] and other works of the Tomsk team led by E.M. Oks.…”